APTC80H29SCT Datasheet, PDF (1/7 Pages) Advanced Power Technology – Full - Bridge Series & SiC parallel diodes Super Junction MOSFET Power Module

APTC80H29SCT
Full - Bridge
Series & SiC parallel diodes
Super Junction
MOSFET Power Module
CR1A
VBUS
CR3A
V_DSS = 800V
R_DSon = 290mW max @ Tj = 25°C
I_D = 15A @ Tc = 25°C
Application
· Motor control
· Switched Mode Power Supplies
· Uninterruptible Power Supplies
CR1B CR3B
Q1
Q3
Features
·
G1
G3
S1
OUT1 OUT2
S3
CR2A
CR4A
CR2B CR4B
Q2
Q4
- Ultra low R_DSon
- Low Miller capacitance
- Ultra low gate charge
- Avalanche energy rated
G2
S2
NTC1
0/VBUS
G4
S4
NTC2
· Parallel SiC Schottky Diode
- Zero reverse recovery
- Zero forward recovery
- Temperature Independent switching behavior
- Positive temperature coefficient on VF
G3
G4
OUT2
S3
S4
· Kelvin source for easy drive
· Very low stray inductance
- Symmetrical design
- Lead frames for power connections
· Internal thermistor for temperature monitoring
· High level of integration
VBUS
0/VBUS
OUT1
Benefits
· Outstanding performance at high frequency operation
· Direct mounting to heatsink (isolated package)
S1
S2
NTC2
G1
G2
NTC1
· Low junction to case thermal resistance
· Solderable terminals both for power and signal for
easy PCB mounting
Absolute maximum ratings
· Low profile
Symbol
Parameter
Max ratings Unit
V_DSS Drain - Source Breakdown Voltage
I_D Continuous Drain Current
800
V
T_c = 25°C
15
T_c = 80°C
11
A
I_DM
V_GS
R_DSon
Pulsed Drain current
Gate - Source Voltage
Drain - Source ON Resistance
60
±30
V
290
mW
P_D Maximum Power Dissipation
T_c = 25°C
156
W
I_AR Avalanche current (repetitive and non repetitive)
24
A
E_AR Repetitive Avalanche Energy
E_AS Single Pulse Avalanche Energy
0.5
670
mJ
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
APT website – http://www.advancedpower.com
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