APT55M50JFLL Datasheet, PDF (4/5 Pages) Advanced Power Technology – POWER MOS 7 FREDFET

308
OPERATION HERE
LIMITED BY R_DS (ON)
100
50
100µS
1mS
10
10mS
TC =+25°C
TJ =+150°C
SINGLE PULSE
1
1
10
100
550
V_DS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 10, MAXIMUM SAFE OPERATING AREA
16
I_D = 77A
12
VDS= 60V
8
VDS= 150V
VDS= 240V
4
0
0 50 100 150 200 250 300 350 400
Q_g, TOTAL GATE CHARGE (nC)
FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE
250
200
150
100
V_DD = 367V
R_G = 5Ω
T_J = 125°C
L = 100µH
t_d(off)
50
t_d(on)
0
10 30 50 70 90 110 130
I_D (A)
FIGURE 14, DELAY TIMES vs CURRENT
3500
3000
2500
2000
1500
E_on
1000
V_DD = 367V
R_G = 5Ω
T_J = 125°C
500
L = 100µH
E_off
0
E_ON includes
diode reverse recovery.
10 30 50 70 90 110 130
I_D (A)
FIGURE 16, SWITCHING ENERGY vs CURRENT
30,000
10,000
1,000
APT55M50JFLL
Ciss
Coss
100
Crss
10
0
10
20
30
40
50
V_DS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 11, CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
300
100
TJ =+150°C
TJ =+25°C
10
1
0.3 0.5 0.7 0.9 1.1 1.3 1.5
V_SD, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
FIGURE 13, SOURCE-DRAIN DIODE FORWARD VOLTAGE
140
V_DD = 367V
120
R_G = 5Ω
T_J = 125°C
L = 100µH
t_f
100
80
60
40
t_r
20
0
10 30 50 70 90 110 130
I_D (A)
FIGURE 15, RISE AND FALL TIMES vs CURRENT
8,000
V_DD = 367V
7,000 ^ID ^{= 77A}
T_J = 125°C
6,000 ^{L = 100µH}
E_ON includes
E_off
5,000 ^{diode reverse recovery.}
4,000
3,000
2,000
E_on
1,000
0
0 5 10 15 20 25 30 35 40 45 50
R_G, GATE RESISTANCE (Ohms)
FIGURE 17, SWITCHING ENERGY VS. GATE RESISTANCE