APT55M50JFLL Datasheet, PDF (3/5 Pages) Advanced Power Technology – POWER MOS 7 FREDFET

Typical Performance Curves
Junction
temp. (°C)
RC MODEL
0.0244
0.0731F
Power
(watts)
0.133
0.701F
Case temperature. (°C)
0.0218
20.1F
FIGURE 2, TRANSIENT THERMAL IMPEDANCE MODEL
250
200
VDS> ID (ON) x RDS (ON)MAX.
250 µSEC. PULSE TEST
@ <0.5 % DUTY CYCLE
150
TJ = -55°C
100
TJ = +25°C
50
TJ = +125°C
0
01 2 34 5 6 7 8
V_GS, GATE-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 4, TRANSFER CHARACTERISTICS
80
70
60
50
40
30
20
10
0
25
50
75
100 125 150
T_C, CASE TEMPERATURE (°C)
FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE
2.5
I_D = 38.5A
V_GS = 10V
2.0
1.5
1.0
0.5
0.0
-50 -25 0 25 50 75 100 125 150
T_J, JUNCTION TEMPERATURE (°C)
FIGURE 8, ON-RESISTANCE vs. TEMPERATURE
250
VGS =15 & 10V
200
150
100
6.5V
6V
5.5V
APT55M50JFLL
5V
50
4.5V
4V
0
0
5
10 15 20 25 30
V_DS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 3, LOW VOLTAGE OUTPUT CHARACTERISTICS
1.40
NORMALIZED TO
V_GS = 10V @ 38.5A
1.30
1.20
1.10
VGS=10V
1.00
VGS=20V
0.90
0.80
0 20 40 60 80 100 120 140 160
I_D, DRAIN CURRENT (AMPERES)
FIGURE 5, R_DS(ON) vs DRAIN CURRENT
1.15
1.10
1.05
1.00
0.95
0.90
0.85
-50 -25 0 25 50 75 100 125 150
T_J, JUNCTION TEMPERATURE (°C)
FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE
1.2
1.1
1.0
0.9
0.8
0.7
0.6
-50 -25 0 25 50 75 100 125 150
T_C, CASE TEMPERATURE (°C)
FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE