APT50M65B2LL_04 Datasheet, PDF (4/5 Pages) Advanced Power Technology – POWER MOS 7 R MOSFET

268
100
OPERATION HERE
LIMITED BY R_DS (ON)
100µS
10
1mS
TC =+25°C
TJ =+150°C
SINGLE PULSE
1
1
10
100
500
V_DS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 10, MAXIMUM SAFE OPERATING AREA
16
I_D = 67A
10mS
12
VDS=100V
VDS=250V
8
VDS=400V
4
0
0
40
80
120 160
200
Q_g, TOTAL GATE CHARGE (nC)
FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE
80
70
t_d(off)
60
50
V_DD = 333V
R_G = 3Ω
40 ^{TJ = 125°C}
L = 100µH
30
20
t_d(on)
10
0
10
30
50
70
90
110
I_D (A)
FIGURE 14, DELAY TIMES vs CURRENT
3000
V_DD = 333V
R_G = 3Ω
2500 T_J = 125°C
L = 100µH
E_on
E_ON includes
2000 diode reverse recovery.
1500
1000
500
E_off
0
10
30
50
70
90 110
I_D (A)
FIGURE 16, SWITCHING ENERGY vs CURRENT
30,000
10,000
1,000
APT50M65B2LL - LLL
Ciss
Coss
100
Crss
10
0
10
20
30
40
50
V_DS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 11,CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
200
100
TJ =+150°C
TJ =+25°C
10
1
0.3 0.5 0.7 0.9 1.1 1.3 1.5
V_SD, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
FIGURE 13, SOURCE-DRAIN DIODE FORWARD VOLTAGE
160
V_DD = 333V
140 ^RG ^{= 3Ω}
T_J = 125°C
t_f
120 ^{L = 100µH}
100
80
60
40
t_r
20
0
10
30
50
70
90
110
I_D (A)
FIGURE 15, RISE AND FALL TIMES vs CURRENT
5000
4000
3000
V_DD = 333V
I_D = 67A
T_J = 125°C
L = 100µH
E_ON includes
diode reverse recovery.
E_off
2000
E_on
1000
0
0 5 10 15 20 25 30 35 40 45 50
R_G, GATE RESISTANCE (Ohms)
FIGURE 17, SWITCHING ENERGY VS. GATE RESISTANCE