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| APT50M65B2LL_04 Datasheet, PDF (2/5 Pages) Advanced Power Technology – POWER MOS 7 R MOSFET | |||
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DYNAMIC CHARACTERISTICS
APT50M65 B2LL - LLL
Symbol
Ciss
Coss
Crss
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Eon
Eoff
Eon
Eoff
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge 3
Gate-Source Charge
Gate-Drain ("Miller ") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Switching Energy 6
Turn-off Switching Energy
Turn-on Switching Energy 6
Turn-off Switching Energy
Test Conditions
VGS = 0V
VDS = 25V
f = 1 MHz
VGS = 10V
VDD = 250V
ID = 67A @ 25°C
RESISTIVE SWITCHING
VGS = 15V
VDD = 250V
ID = 67A @ 25°C
RG = 0.6â¦
INDUCTIVE SWITCHING @ 25°C
VDD = 333V, VGS = 15V
ID = 67A, RG = 3â¦
INDUCTIVE SWITCHING @ 125°C
VDD = 333V, VGS = 15V
ID = 67A, RG = 3â¦
MIN
TYP
7010
1390
87
141
40
70
12
28
29
30
1035
845
1556
1013
MAX
UNIT
pF
nC
ns
µJ
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Symbol Characteristic / Test Conditions
MIN TYP MAX UNIT
IS
Continuous Source Current (Body Diode)
ISM
Pulsed Source Current 1 (Body Diode)
VSD Diode Forward Voltage 2 (VGS = 0V, IS = -67A)
t rr
Reverse Recovery Time (IS = -67A, dlS/dt = 100A/µs)
Q rr Reverse Recovery Charge (IS = -67A, dlS/dt = 100A/µs)
dv/dt Peak Diode Recovery dv/dt 5
67
Amps
268
1.3 Volts
680
ns
17.0
µC
8
V/ns
THERMAL CHARACTERISTICS
Symbol Characteristic
MIN TYP MAX UNIT
RθJC
RθJA
Junction to Case
Junction to Ambient
0.18
°C/W
40
1 Repetitive Rating: Pulse width limited by maximum junction
temperature
2 Pulse Test: Pulse width < 380 µs, Duty Cycle < 2%
3 See MIL-STD-750 Method 3471
4 Starting Tj = +25°C, L = 1.34mH, RG = 25â¦, Peak IL = 67A
5 dv/dt numbers reflect the limitations of the test circuit rather than the
device itself. IS ⤠-67A di/dt ⤠700A/µs VR ⤠500V TJ ⤠150°C
6 Eon includes diode reverse recovery. See figures 18, 20.
APT Reserves the right to change, without notice, the specifications and information contained herein.
0.20
0.9
0.16
0.7
0.12
0.08
0.04
0
10-5
0.5
Note:
0.3
0.1
0.05
SINGLE PULSE
t1
t2
Duty Factor D = t1/t2
Peak TJ = PDM x ZθJC + TC
10-4
10-3
10-2
10-1
1.0
RECTANGULAR PULSE DURATION (SECONDS)
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
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