APT50GT120JRDQ2 Datasheet, PDF (4/9 Pages) Advanced Power Technology – Thunderbolt IGBT

35
30
25
V_GE = 15V
20
15
10
V_CE = 800V
5 ^TJ ^{= 25°C, or 125°C}
R_G = 1Ω
L = 100µH
0
10
30
50
70
90
110
I_CE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 9, Turn-On Delay Time vs Collector Current
160
R_G = 1Ω, L = 100µH, V_CE = 800V
140
120
100
80
60
40
T_J = 25 or 125°C,V_GE = 15V
20
010
30
50
70
90
110
I_CE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 11, Current Rise Time vs Collector Current
25,000
20,000
V_CE = 800V
V_GE = +15V
R_G = 1Ω
15,000
T_J = 125°C
10,000
5,000
T_J = 25°C
0
10
30
50
70
90
110
I_CE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 13, Turn-On Energy Loss vs Collector Current
60,000
50,000
V_CE = 800V
V_GE = +15V
T_J = 125°C
E_on2,100A
40,000
30,000
20,000
10,000 ^Eon2,50A
E_off,100A
E_off,50A _Eon2,25A
0
E_off,25A
0
10
20
30
40
50
R_G, GATE RESISTANCE (OHMS)
FIGURE 15, Switching Energy Losses vs. Gate Resistance
APT50GT120JRDQ2
300
250
200 V_GE =15V,T_J=125°C
150
V_GE =15V,T_J=25°C
100
50 V_CE = 800V
R_G = 1Ω
L = 100µH
0
10
30
50
70
90
110
I_CE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 10, Turn-Off Delay Time vs Collector Current
60
R_G = 1Ω, L = 100µH, V_CE = 800V
50
40
T_J = 125°C, V_GE = 15V
30
20 ^TJ ^{= 25°C, V}GE ^{= 15V}
10
010
30
50
70
90
110
I_CE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 12, Current Fall Time vs Collector Current
6000
5000
V_CE = 800V
V_GE = +15V
R_G = 1Ω
T_J = 125°C
4000
3000
2000
1000
T_J = 25°C
0
10
30
50
70
90
110
I_CE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 14, Turn Off Energy Loss vs Collector Current
25,000
20,000
V_CE = 800V
V_GE = +15V
R_G = 1Ω
E_on2,100A
15,000
10,000
5,000
E_on2,50A
E_off,50A
E_on2,25A ^Eoff,100A
0
E_off,25A
0
25
50
75
100 125
T_J, JUNCTION TEMPERATURE (°C)
FIGURE 16, Switching Energy Losses vs Junction Temperature