APT50GT120JRDQ2 Datasheet, PDF (3/9 Pages) Advanced Power Technology – Thunderbolt IGBT

TYPICAL PERFORMANCE CURVES
120
V_GE = 15V
100
80
T_J = 25°C
60
T_J = 125°C
40
20
0
012 3 456 7
V_CE, COLLECTER-TO-EMITTER VOLTAGE (V)
FIGURE 1, Output Characteristics(T_J = 25°C)
140
250µs PULSE
TEST<0.5 % DUTY
120
CYCLE
100
80
T_J = -55°C
60
T_J = 25°C
40
T_J = 125°C
20
0
0 2 4 6 8 10 12 14
V_GE, GATE-TO-EMITTER VOLTAGE (V)
FIGURE 3, Transfer Characteristics
6
T_J = 25°C.
250µs PULSE TEST
<0.5 % DUTY CYCLE
5
I_C = 100A
4
I_C = 50A
3
2
I_C = 25A
1
0
8
10
12
14
16
V_GE, GATE-TO-EMITTER VOLTAGE (V)
FIGURE 5, On State Voltage vs Gate-to- Emitter Voltage
1.10
1.05
1.00
0.95
0.90
0.85
0.80
0.75
-50 -25 0 25 50 75 100 125 150
T_J, JUNCTION TEMPERATURE (°C)
FIGURE 7, Threshold Voltage vs. Junction Temperature
APT50GT120JRDQ2
150
15V
125
13V
100
12V
75
11V
50
10V
25
9V
8V
0
7V
0
5
10
15
20
V_CE, COLLECTER-TO-EMITTER VOLTAGE (V)
FIGURE 2, Output Characteristics (T_J = 125°C)
16
I_C = 50A
14 ^{TJ = 25°C}
V_CE = 240V
V_CE = 600V
12
10
V_CE = 960V
8
6
4
2
0
0 50 100 150 200 250 300 350
GATE CHARGE (nC)
FIGURE 4, Gate Charge
7
V_GE = 15V.
250µs PULSE TEST
6 ^{<0.5 % DUTY CYCLE}
I_C = 100A
5
4
I_C = 50A
3
I_C = 25A
2
1
0
25
50
75
100 125 150
T_J, Junction Temperature (°C)
FIGURE 6, On State Voltage vs Junction Temperature
100
90
80
70
60
50
40
30
20
10
0
-50 -25 0 25 50 75 100 125 150
T_C, CASE TEMPERATURE (°C)
FIGURE 8, DC Collector Current vs Case Temperature