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APT50GP60B Datasheet, PDF (4/6 Pages) Advanced Power Technology – POWER MOS 7 IGBT
TYPICAL PERFORMANCE CURVES
40
35
VGE= 10V
30
25
VGE= 15V
20
15
10
VCE = 400V
TJ = 25°C or 125°C
05
RG = 5Ω
L = 100 µH
0
20 30 40 50 60 70 80 90 100
ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 9, Turn-On Delay Time vs Collector Current
100
90
TJ = 25 or 125°C,VGE = 10V
80
70
60
50
40
30
TJ = 25 or 125°C,VGE = 15V
20
10
RG =5Ω, L = 100µH, VCE = 400V
0
20 30 40 50 60 70 80 90 100
ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 11, Current Rise Time vs Collector Current
4000
3500
VCE = 400V
L = 100 µH
RG = 5 Ω
TJ =125°C, VGE=15V
3000
2500
TJ =125°C,VGE=10V
2000
1500
1000
TJ = 25°C, VGE=15V
500
TJ = 25°C, VGE=10V
0
10 20 30 40 50 60 70 80 90 100
ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 13, Turn-On Energy Loss vs Collector Current
6000
5000
VCE = 400V
VGE = +15V
TJ = 125°C
4000 Eon2 100A
3000
Eoff 100A
2000
Eon2 50A
1000 Eon2 25A
Eoff 50A
0
Eoff 25A
0
10
20
30
40
50
RG, GATE RESISTANCE (OHMS)
FIGURE 15, Switching Energy Losses vs. Gate Resistance
APT50GP60B
140
120
VGE =15V,TJ=125°C
100
VGE =10V,TJ=125°C
80
60 VGE =15V,TJ=25°C
40
VGE =10V,TJ=25°C
VCE = 400V
20 RG = 5Ω
L = 100 µH
0
20 30 40 50 60 70 80 90 100
ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 10, Turn-Off Delay Time vs Collector Current
120
TJ = 125°C, VGE = 10V or 15V
100
80
60
40
TJ = 25°C, VGE = 10V or 15V
20
RG =5Ω, L = 100µH, VCE = 400V
0
20 30 40 50 60 70 80 90 100
ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 12, Current Fall Time vs Collector Current
3500
3000
VCE = 400V
L = 100 µH
RG = 5 Ω
TJ = 125°C, VGE = 10V or 15V
2500
2000
1500
1000
500
TJ = 25°C, VGE = 10V or 15V
0
20 30 40 50 60 70 80 90 100
ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 14, Turn Off Energy Loss vs Collector Current
4000
3500
VCE = 400V
VGE = +15V
RG = 5 Ω
3000
2500
Eon2 100A
Eoff 100A
2000
1500
1000 Eon2 50A
Eoff 50A
500 Eon2 25A
0
Eoff 25A
-50 -25 0 25 50 75 100 125
TJ, JUNCTION TEMPERATURE (°C)
FIGURE 16, Switching Energy Losses vs Junction Temperature