APT5040KFLL Datasheet, PDF (4/5 Pages) Advanced Power Technology – POWER MOS 7 FREDFET

Typical Preformance Curves
68
OPERATION HERE
LIMITED BY R_DS (ON)
10
100µS
5
1mS
1
10mS
TC =+25°C
TJ =+150°C
SINGLE PULSE
.1
1
10
100
500
V_DS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 10, MAXIMUM SAFE OPERATING AREA
16
I_D = 17A
14
12
VDS=100V
10
8
VDS=250V
VDS=400V
6
4
2
0
0 5 10 15 20 25 30 35 40
Q_g, TOTAL GATE CHARGE (nC)
FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE
30
25
20 ^V_DD ^{= 333V}
R_G = 5Ω
15 ^{TJ = 125°C}
L = 100µH
10
t_d(on)
5
t_d(off)
0
0
5
10
15
20
I_D (A)
FIGURE 14, DELAY TIMES vs CURRENT
250
200
150
V_DD = 333V
R_G = 5Ω
T_J = 125°C
L = 100µH
E_ON includes
diode reverse recovery.
E_on
100
50
E_off
0
0
4
8
12
16
20
I_D (A)
FIGURE 16, SWITCHING ENERGY vs CURRENT
4,000
1,000
100
APT5040KFLL
Ciss
Coss
Crss
10
0
10
20
30
40
50
V_DS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 11,CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
100
50
TJ =+150°C
10
TJ =+25°C
5
1
0.3 0.5 0.7 0.9 1.1 1.3 1.5
V_SD, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
FIGURE 13, SOURCE-DRAIN DIODE FORWARD VOLTAGE
50
V_DD = 333V
R_G = 5Ω
40
T_J = 125°C
L = 100µH
30
t_f
20
10
t_r
0
0
5
10
15
20
I_D (A)
FIGURE 15, RISE AND FALL TIMES vs CURRENT
300
250
E_on
200
150
100
E_off
V_DD = 333V
I_D = 17A
T_J = 125°C
50
L = 100µH
E_ON includes
diode reverse recovery.
0
0 5 10 15 20 25 30 35 40 45 50
R_G, GATE RESISTANCE (Ohms)
FIGURE 17, SWITCHING ENERGY VS. GATE RESISTANCE