APT5040KFLL Datasheet, PDF (2/5 Pages) Advanced Power Technology – POWER MOS 7 FREDFET

DYNAMIC CHARACTERISTICS
Symbol Characteristic
Test Conditions
C_iss
C_oss
C_rss
Q_g
Q_gs
Q_gd
t_d(on)
t_r
t_d(off)
t_f
E_on
E_off
E_on
E_off
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge ³
Gate-Source Charge
Gate-Drain ("Miller ") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Switching Energy ⁶
Turn-off Switching Energy
Turn-on Switching Energy ⁶
Turn-off Switching Energy
V_GS = 0V
V_DS = 25V
f = 1 MHz
V_GS = 10V
V_DD = 250V
I_D = 17A @ 25°C
RESISTIVE SWITCHING
V_GS = 15V
V_DD = 250V
I_D = 17A @ 25°C
R_G = 0.6Ω
INDUCTIVE SWITCHING @ 25°C
V_DD = 333V, V_GS = 15V
I_D = 17A, R_G = 5Ω
INDUCTIVE SWITCHING @ 125°C
V_DD = 333V V_GS = 15V
I_D = 17A, R_G = 5Ω
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Symbol Characteristic / Test Conditions
I_S
Continuous Source Current (Body Diode)
I_{SM Pulsed Source Current} 1 _{(Body Diode)}
V_SD Diode Forward Voltage ² (V_GS = 0V, I_S = -I_D 17A)
dv_{/dt Peak Diode Recovery} dv_/dt 5
Reverse Recovery Time
t_rr
(I_S = -I_D 17A, ^di/_dt = 100A/µs, V_R = 333V)
T_j = 25°C
T_j = 125°C
Reverse Recovery Charge
Q_rr
(I_S = -I_D 17A, ^di/_dt = 100A/µs, V_R = 333V)
T_j = 25°C
T_j = 125°C
I_RRM
Peak Recovery Current
(I_S = -I_D 17A, ^di/_dt = 100A/µs, V_R = 333V)
T_j = 25°C
T_j = 125°C
THERMAL CHARACTERISTICS
Symbol Characteristic
R_θJC
R_θJA
Junction to Case
Junction to Ambient
APT5040KFLL
MIN TYP MAX UNIT
1006
234
pF
16
26
8
nC
14
9
4
ns
18
2
73
26
µJ
198
47
MIN TYP MAX UNIT
17 _Amps
68
1.3 Volts
15 V/ns
212 280
ns
272 350
853 1110
µC
1299 1690
7.8
10
Amps
9
12
MIN TYP MAX UNIT
.50
TBD
°C/W
1 Repetitive Rating: Pulse width limited by maximum junction
temperature
2 Pulse Test: Pulse width < 380 µs, Duty Cycle < 2%
3 See MIL-STD-750 Method 3471
4 Starting T_j = +25°C, L = 2.94mH, R_G = 25Ω, Peak I_L = 17A
5 ^dv/_dt numbers reflect the limitations of the test circuit rather than the
device itself. I_S ≤ -I_D17A ^di/_dt ≤ 700A/µs V_R ≤ V_DSS T_J ≤ 150°C
6 Eon includes diode reverse recovery. See figures 18, 20.
APT Reserves the right to change, without notice, the specifications and information contained herein.
0.60
0.50
0.9
0.40
0.7
0.30
0.20
0.10
0
10^-5
0.5
Note:
0.3
t1
0.1
0.05
SINGLE PULSE
t2
Duty Factor D = ^t1/t2
Peak TJ = PDM x Z_θJC + TC
10^-4
10^-3
10^-2
10^-1
1.0
RECTANGULAR PULSE DURATION (seconds)
FIGURE 9a. MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs. PULSE DURATION