APT5040CNR Datasheet, PDF (4/4 Pages) Advanced Power Technology – N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS

60
OPERATION HERE
LIMITED BY R_DS (ON)
10
5
1µS
10µS
100µS
1 _{TC =+25°C}
0.5 ^{TJ =+150°C}
SINGLE PULSE
1mS
10mS
DC
.1 ₁
5 10
50 100
500
V_DS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 10, MAXIMUM SAFE OPERATING AREA
20
I_D = I_D [Cont.]
16
VDS=100V
VDS=250V
12
8
VDS=400V
4
00
20
40
60
80
100
Q_gg, TOTAL GATE CHARGE (nC)
FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE
10,000
1,000
100
APT5040CNR
Ciss
Coss
Crss
10
0
10
20
30
40
50
V_DS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 11, TYPICAL CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
100
50
20
TJ =+150°C
10
5
TJ =+25°C
2
1
0
0.5
1.0
1.5
2.0
V_SD, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
FIGURE 13, TYPICAL SOURCE-DRAIN DIODE FORWARD VOLTAGE
1.27 (.050)
1.02 (.040)
TO-254AA Package Outline
13.84 (.545)
13.59 (.535)
6.91 (.272)
6.81 (.268)
20.32 (.800)
20.07 (.790)
13.84 (.545)
13.59 (.535)
17.40 (.685)
16.89 (.665)
3.78
3.53
(.149)
(.139)
Dia.
31.37 (1.235)
30.35 (1.195)
3.81 (.150) BSC
6.60 (.260)
6.32 (.249)
1.14 (.045) Dia. Typ.
.89 (.035) 3 Leads
3.81 (.150) BSC
Dimensions in Millimeters and (Inches)
Drain
Source
Gate