APT5040CNR Datasheet, PDF (2/4 Pages) Advanced Power Technology – N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS

DYNAMIC CHARACTERISTICS
Symbol Characteristic
C_DC
C_iss
C_oss
C_rss
Q_g
Q_gs
Q_gd
t_d(on)
t_r
t_d(off)
t_f
Drain-to-Case Capacitance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain ("Miller ") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Test Conditions
f = 1 MHz
V_GS = 0V
V_DS = 25V
f = 1 MHz
V_GS = 10V
V_DD = 0.5 V_DSS
I_D = I_D [Cont.] @ 25°C
V_GS = 10V
V_DD = 0.5 V_DSS
I_D = I_D [Cont.] @ 25°C
R_G = 1.80Ω
APT5040CNR
MIN TYP MAX UNIT
15
22
1430 1800
pF
330 465
130 200
71 105
8.7
12
nC
37
55
14
28
21
42
ns
44
66
15
30
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Symbol Characteristic / Test Conditions
I_S
Continuous Source Current (Body Diode)
I_SM
Pulsed Source Current ¹ (Body Diode)
V_SD
Diode Forward Voltage ² (V_GS = 0V, I_S = -I_D [Cont.])
t _rr
Reverse Recovery Time (I_S = -I_D [Cont.], dl_S/dt = 100A/µs)
Q _{rr Reverse Recovery Charge (IS = -ID [Cont.], dlS/dt = 100A/µs)}
MIN TYP MAX UNIT
13
Amps
52
1.3 Volts
296 592 ns
4.4
8.8
µC
THERMAL CHARACTERISTICS
Symbol Characteristic
MIN TYP MAX
R_θJC
R_θJA
Junction to Case
Junction to Ambient
0.80
50
1 _{Repetitive Rating: Pulse width limited by maximum junction temperature. See Transient Thermal Impedance Curve. (Fig.1)}
2 _{Pulse Test: Pulse width < 380 µS, Duty Cycle < 2%}
3 _{Starting Tj = +25°C, L = 9.47mH, RG = 25Ω, Peak IL = 13A}
APT Reserves the right to change, without notice, the specifications and information contained herein.
1.0
0.5
D=0.5
0.2
0.1
0.1
0.05
0.05
0.02
0.01
0.01
SINGLE PULSE
Note:
t1
0.005
t2
Duty Factor D = ^t1/t2
Peak TJ = PDM x Z_θJC + TC
0.001
10^-5
10^-4
10^-3
10^-2
10^-1
1.0
10
RECTANGULAR PULSE DURATION (SECONDS)
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
UNIT
W/°C