APT5014BFLL_04 Datasheet, PDF (4/5 Pages) Advanced Power Technology – POWER MOS 7 FREDFET

Typical Performance Curves
140
OPERATION HERE
LIMITED BY R_DS (ON)
50
100µS
10
1mS
TC =+25°C
TJ =+150°C
SINGLE PULSE
1
1
5 10
50 100
500
V_DS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 10, MAXIMUM SAFE OPERATING AREA
16
I_D = 35A
14
10mS
12
VDS=100V
10
VDS=250V
8
VDS=400V
6
4
2
0
0
20
40
60
80
100
Q_g, TOTAL GATE CHARGE (nC)
FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE
60
50
t_d(off)
40 V_DD = 333V
R_G = 5Ω
30 ^{TJ = 125°C}
L = 100µH
20
10
t_d(on)
0
0 10 20 30 40 50 60
I_D (A)
FIGURE 14, DELAY TIMES vs CURRENT
1000
800
600
V_DD = 333V
R_G = 5Ω
T_J = 125°C
L = 100µH
E_ON includes
diode reverse recovery.
E_on
400
200
E_off
0
0 10 20 30 40 50 60
I_D (A)
FIGURE 16, SWITCHING ENERGY vs CURRENT
10,000
1,000
APT5014BFLL_SFLL
Ciss
Coss
100
Crss
10
0
10
20
30
40
50
V_DS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 11,CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
200
100
50
TJ =+150°C
TJ =+25°C
10
5
1
0.3 0.5 0.7 0.9 1.1 1.3 1.5
V_SD, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
FIGURE 13, SOURCE-DRAIN DIODE FORWARD VOLTAGE
70
V_DD = 333V
60 ^{RG = 5Ω}
T_J = 125°C
L = 100µH
t_f
50
40
30
20
t_r
10
0
0 10 20 30 40 50 60
I_D (A)
FIGURE 15, RISE AND FALL TIMES vs CURRENT
1400
1200
1000
V_DD = 333V
I_D = 35A
T_J = 125°C
L = 100µH
E_ON includes
diode reverse recovery.
E_off
800
600
E_on
400
200
0
0 5 10 15 20 25 30 35 40 45 50
R_G, GATE RESISTANCE (Ohms)
FIGURE 17, SWITCHING ENERGY VS. GATE RESISTANCE