APT5014BFLL_04 Datasheet, PDF (2/5 Pages) Advanced Power Technology – POWER MOS 7 FREDFET

DYNAMIC CHARACTERISTICS
APT5014BFLL_SFLL
Symbol Characteristic
Test Conditions
MIN TYP MAX UNIT
C_iss
C_oss
C_rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V_GS = 0V
V_DS = 25V
f = 1 MHz
3261
704
pF
50
Q_g
Total Gate Charge ³
Q_{gs Gate-Source Charge}
Q_{gd Gate-Drain ("Miller ") Charge}
V_GS = 10V
V_DD = 550V
I_D = 35A @ 25°C
72
20
nC
36
t_d(on)
t_r
t_d(off)
t_f
E_on
E_off
E_on
E_off
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Switching Energy ⁶
Turn-off Switching Energy
Turn-on Switching Energy ⁶
Turn-off Switching Energy
RESISTIVE SWITCHING
11
V_GS = 15V
V_DD = 550V
I_D = 35A @ 25°C
6
ns
23
R_G = 1.6Ω
3
INDUCTIVE SWITCHING @ 25°C
V_DD = 333V, V_GS = 15V
325
I_D = 35A, R_G = 5Ω
249
µJ
INDUCTIVE SWITCHING @ 125°C
545
V_DD = 333V V_GS = 15V
I_D = 35A, R_G = 5Ω
288
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Symbol Characteristic / Test Conditions
MIN TYP MAX UNIT
I_S
Continuous Source Current (Body Diode)
I_{SM Pulsed Source Current} 1 _{(Body Diode)}
35 _Amps
140
V_{SD Diode Forward Voltage} 2 _{(VGS = 0V, IS = -35A)}
dv_/dt
Peak Diode Recovery ^dv/_dt ⁵
1.3 Volts
15 V/ns
t_rr
Reverse Recovery Time
(I_S = -35A, ^di/_dt = 100A/µs)
T_j = 25°C
T_j = 125°C
250
ns
525
Reverse Recovery Charge
Q_rr
(I_S = -35A, ^di/_dt = 100A/µs)
T_j = 25°C
T_j = 125°C
1.6
µC
6.0
Peak Recovery Current
I_RRM
(I_S = -35A, ^di/_dt = 100A/µs)
T_j = 25°C
T_j = 125°C
13
Amps
21
THERMAL CHARACTERISTICS
Symbol Characteristic
MIN TYP MAX UNIT
R_θJC
R_θJA
Junction to Case
Junction to Ambient
0.31
40
°C/W
1 Repetitive Rating: Pulse width limited by maximum junction
temperature
2 Pulse Test: Pulse width < 380 µs, Duty Cycle < 2%
3 See MIL-STD-750 Method 3471
4 Starting T_j = +25°C, L = 2.12mH, R_G = 25Ω, Peak I_L = 35A
5 ^dv/_dt numbers reflect the limitations of the test circuit rather than the
device itself. I_S ≤ -35A ^di/_dt ≤ 700A/µs V_R ≤ 500V T_J ≤ 150°C
6 Eon includes diode reverse recovery. See figures 18, 20.
APT Reserves the right to change, without notice, the specifications and information contained herein.
0.35
0.30
0.9
0.25
0.7
0.20
0.5
0.15
Note:
0.10
0.05
0
10^-5
0.3
t1
0.1
0.05
SINGLE PULSE
t2
Duty Factor D = ^t1/t2
Peak TJ = PDM x Z_θJC + TC
10^-4
10^-3
10^-2
10^-1
1.0
RECTANGULAR PULSE DURATION (SECONDS)
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION