APT47N60BCF Datasheet, PDF (4/5 Pages) Advanced Power Technology – Super Junction FREDFET

115
OPERATION HERE
LIMITED BY R_DS (ON)
50
100µS
10
5
T_C =+25°C
T_J =+150°C
SINGLE PULSE
1
1
10
100
600
V_DS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 10, MAXIMUM SAFE OPERATING AREA
16
I_D = 46A
14
1mS
10mS
12
V_DS=120V
10
V_DS=300V
8
6
V_DS=480V
4
2
0
0 50 100 150 200 250 300 350 400
Q_g, TOTAL GATE CHARGE (nC)
FIGURE 12, GATE CHARGE vs GATE-TO-SOURCE VOLTAGE
300
250
t_d(off)
200
150
V_DD = 400V
R_G = 4.3Ω
T_J = 125°C
L = 100µH
100
50
t_d(on)
0
0 10 20 30 40 50 60 70 80
I_D (A)
FIGURE 14, DELAY TIMES vs CURRENT
2500
V_DD = 400V
R_G = 4.3Ω
2000 ^{TJ = 125°C}
L = 100µH
E_on includes
diode reverse recovery.
1500
E_on
1000
500
E_off
0
0 10 20 30 40 50 60 70 80
I_D (A)
FIGURE 16, SWITCHING ENERGY vs CURRENT
APT47N60BCF_SCF(G)
40⁴
10⁴
C_iss
10³
C_oss
10²
C_rss
10¹
0
100 200 300 400 500
V_DS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 11, CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
200
100
T_J =+150°C
T_J =+25°C
10
1
0.3 0.5 0.7 0.9 1.1 1.3 1.5
V_SD, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
FIGURE 13, SOURCE-DRAIN DIODE FORWARD VOLTAGE
90
80
70
60
50
V_DD = 400V
40 _{RG = 4.3Ω}
30
T_J = 125°C
L = 100µH
20
t_f
t_r
10
0
0 10 20 30 40 50 60 70 80
I_D (A)
FIGURE 15, RISE AND FALL TIMES vs CURRENT
3500
E_off
3000
2500
E_on
2000
1500
1000
V_DD = 400V
I_D = 46A
500
T_J = 125°C
L = 100µH
E_on includes
diode reverse recovery.
0
0 5 10 15 20 25 30 35 40 45 50
R_G, GATE RESISTANCE (Ohms)
FIGURE 17, SWITCHING ENERGY VS. GATE RESISTANCE