APT47N60BCF Datasheet, PDF (2/5 Pages) Advanced Power Technology – Super Junction FREDFET

DYNAMIC CHARACTERISTICS
APT47N60BCF_SCF(G)
Symbol
C_iss
C_oss
C_rss
Q_g
Q_gs
Q_gd
t_d(on)
t_r
t_d(off)
t_f
E_on
E_off
E_on
E_off
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge ⁵
Gate-Source Charge
Gate-Drain ("Miller ") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Switching Energy ⁶
Turn-off Switching Energy
Turn-on Switching Energy ⁶
Turn-off Switching Energy
Test Conditions
V_GS = 0V
V_DS = 25V
f = 1 MHz
V_GS = 10V
V_DD = 300V
I_D = 46A @ 25°C
RESISTIVE SWITCHING
V_GS = 15V
V_DD = 380V
I_D = 46A @ 25°C
R_G = 3.6Ω
INDUCTIVE SWITCHING @ 25°C
V_DD = 400V, V_GS = 15V
I_D = 46A, R_G = 4.3Ω
INDUCTIVE SWITCHING @ 125°C
V_DD = 400V, V_GS = 15V
I_D = 46A, R_G = 4.3Ω
MIN
TYP
7290
1735
41
255
43
135
30
30
100
15
885
590
1270
725
MAX
UNIT
pF
nC
ns
µJ
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Symbol Characteristic / Test Conditions
I_S
Continuous Source Current (Body Diode)
I_SM
Pulsed Source Current ¹ (Body Diode)
V_SD
Diode Forward Voltage ⁴ (V_GS = 0V, I_S = -46A)
dv_/dt
Peak Diode Recovery ^dv/_dt ⁷
Reverse Recovery Time
t _rr
(I_S = -46A, ^di/_dt = 100A/µs)
T_{j = 25°C}
T_{j = 125°C}
Reverse Recovery Charge
Q _rr
(I_S = -46A, ^di/_dt = 100A/µs)
T_{j = 25°C}
T_{j = 125°C}
I_RRM
Peak Recovery Current
(I_S = -46A, ^di/_dt = 100A/µs)
T_{j = 25°C}
T_{j = 125°C}
MIN TYP MAX UNIT
46 _Amps
115
1.2 Volts
40
V/ns
210
ns
350
2.0
µC
5.4
18
Amps
28
THERMAL CHARACTERISTICS
Symbol Characteristic
MIN TYP MAX UNIT
R_θJC Junction to Case
R_θJA Junction to Ambient
1 Repetitive Rating: Pulse width limited by maximum junction
temperature
2 Repetitive avalanche causes additional power losses that can
be calculated as P_AV = E_AR*f
3 Starting T_j = +25°C, L = 36.0mH, R_G = 25Ω, Peak I_L = 10A
0.30
62
4 Pulse Test: Pulse width < 380 µs, Duty Cycle < 2%
5 See MIL-STD-750 Method 3471
6 Eon includes diode reverse recovery. See figures 18, 20.
7 Maximum 125°C diode commutation speed = di/dt 600A/µs
°C/W
APT Reserves the right to change, without notice, the specifications and information contained herein.
0.35
0.30
D = 0.9
0.25
0.7
0.20
0.15
0.5
Note:
0.10
0.3
t1
t2
0.05
0.1
0.05
0
SINGLE PULSE
Duty Factor D = ^t1/t2
Peak T_J = P_DM x Z_θJC + TC
10^-5
10^-4
10^-3
10^-2
10^-1
1.0
RECTANGULAR PULSE DURATION (SECONDS)
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION