APT40GF120JRDQ2 Datasheet, PDF (4/9 Pages) Microsemi Corporation – FAST IGBT & FRED

35
30
V_GE = 15V
25
20
15
10
V_CE = 800V
5 ^TJ ^{= 25°C or 125°C}
R_G = 1.0Ω
L = 100µH
0
10
30
50
70
90
110
I_CE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 9, Turn-On Delay Time vs Collector Current
140
R_G = 1.0Ω, L = 100µH, V_CE = 800V
120
T_J = 25 or 125°C,V_GE = 15V
100
80
60
40
20
0
10
30
50
70
90
110
I_CE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 11, Current Rise Time vs Collector Current
25
V_CE = 800V
V_GE = +15V
R_G = 1.0Ω
20
T_J = 125°C
15
10
5
T_J = 25°C
0
10
30
50
70
90
110
I_CE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 13, Turn-On Energy Loss vs Collector Current
35
V_CE = 800V
V_GE = +15V
30 ^TJ ^{= 125°C}
E_on2,100A
25
20
15
10 _Eoff,100A
E_on2,50A
5
E_off,50A
E_on2,25A
0
E_off,25A
0
5
10
15
20
R_G, GATE RESISTANCE (OHMS)
FIGURE 15, Switching Energy Losses vs. Gate Resistance
APT40GF120JRDQ2
350
300
250
V_GE =15V,T_J=125°C
200
150
V_GE =15V,T_J=25°C
100
50 ^VCE ^{= 800V}
R_G = 1.0Ω
L = 100µH
0
10
30
50
70
90
110
I_CE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 10, Turn-Off Delay Time vs Collector Current
120
R_G = 1.0Ω, L = 100µH, V_CE = 800V
100
80
T_J = 125°C, V_GE = 15V
60
T_J = 25°C, V_GE = 15V
40
20
0
10
30
50
70
90
110
I_CE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 12, Current Fall Time vs Collector Current
7
V_CE = 800V
V_GE = +15V
6 ^RG ^{= 1.0Ω}
5
T_J = 125°C
4
3
2
T_J = 25°C
1
0
10
30
50
70
90
110
I_CE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 14, Turn Off Energy Loss vs Collector Current
25
V_CE = 800V
V_GE = +15V
R_G = 1.0Ω
20
E_on2,100A
15
10
5 ^Eoff,100A
E_on2,50A
E_off,50A
E_on2,25A
0
E_off,25A
0
25
50
75
100 125
T_J, JUNCTION TEMPERATURE (°C)
FIGURE 16, Switching Energy Losses vs Junction Temperature