APT40GF120JRDQ2 Datasheet, PDF (2/9 Pages) Microsemi Corporation – FAST IGBT & FRED

DYNAMIC CHARACTERISTICS
Symbol Characteristic
Test Conditions
MIN
C_ies
C_oes
C_res
V_GEP
Q_g
Q_ge
Q_gc
SSOA
t_d(on)
t_r
t_d(off)
t_f
E_on1
E_on2
E_off
t_d(on)
t_r
t_d(off)
t_f
E_on1
E_on2
E_off
Input Capacitance
Capacitance
Output Capacitance
Reverse Transfer Capacitance
V_GE = 0V, V_CE = 25V
f = 1 MHz
Gate-to-Emitter Plateau Voltage
Gate Charge
Total Gate Charge ³
Gate-Emitter Charge
Gate-Collector ("Miller ") Charge
V_GE = 15V
V_CE = 600V
I_C = 50A
Switching Safe Operating Area
T_J = 150°C, R_G = 1.0Ω, ⁷ V_GE =
15V, L = 100µH,V_CE = 1200V
150
Turn-on Delay Time
Inductive Switching (25°C)
Current Rise Time
Turn-off Delay Time
Current Fall Time
Turn-on Switching Energy ⁴
Turn-on Switching Energy (WithDiode) ⁵
V_CC = 800V
V_GE = 15V
I_C = 50A
R_G = 1.0Ω ⁷
T_J = +25°C
Turn-off Switching Energy ⁶
Turn-on Delay Time
Inductive Switching (125°C)
Current Rise Time
Turn-off Delay Time
Current Fall Time
Turn-on Switching Energy ^{4 4}
Turn-on Switching Energy (WithDiode) ⁵⁵
V_CC = 800V
V_GE = 15V
I_C = 50A
R_G = 1.0Ω ⁷
T_J = +125°C
Turn-off Switching Energy ⁶
APT40GF120JRDQ2
TYP MAX UNIT
3460
385
pF
225
9.5
V
340
30
nC
205
A
25
43
ns
260
70
3600
4675
µJ
2640
25
43
ns
300
95
3750
6400
µJ
3400
THERMAL AND MECHANICAL CHARACTERISTICS
Symbol Characteristic
R_θJC
R_θJC
V_Isolation
Junction to Case (IGBT)
Junction to Case (DIODE)
RMS Voltage (50-60Hz Sinusoidal Waveform from Terminals to Mounting Base for 1 Min.)
MIN
2500
W_T
Package Weight
Torque Maximum Terminal & Mounting Torque
TYP
1.03
29.2
MAX
0.36
1.1
10
1.1
UNIT
°C/W
Volts
oz
gm
Ib•in
N•m
1 Repetitive Rating: Pulse width limited by maximum junction temperature.
2 For Combi devices, I_ces includes both IGBT and diode leakages
3 See MIL-STD-750 Method 3471.
4 E_on1 is the clamped inductive turn-on energy of the IGBT only, without the effect of a commutating diode reverse recovery current
adding to the IGBT turn-on loss. Tested in inductive switching test circuit shown in figure 21, but with a Silicon Carbide diode.
5 E_on2 is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on switching
loss. (See Figures 21, 22.)
6 E_off is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. (See Figures 21, 23.)
7 R_G is external gate resistance, not including R_G(int) nor gate driver impedance. (MIC4452)
Mircosemi Reserves the right to change, without notice, the specifications and information contained herein.