APT32GU30K Datasheet, PDF (4/6 Pages) Advanced Power Technology – POWER MOS 7 IGBT

30
V_GE= 15V
25
20
15
10
V_CE = 200V
5
T_J = 25°C, T_J =125°C
R_G = 20Ω
L = 100 µH
0
5 10 15 20 25 30 35
I_CE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 9, Turn-On Delay Time vs Collector Current
25
R_G =20Ω, L = 100µH, V_CE = 200V
20
15
10
T_J = 25 or 125°C,V_GE = 15V
5
0
5 10 15 20 25 30 35
I_CE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 11, Current Rise Time vs Collector Current
200
V_CE = 200V
L = 100 µH
R_G = 20Ω
150
T_J =125°C, V_GE=15V
100
50
T_J = 25°C, V_GE=15V
0
5 10 15 20 25 30 35
I_CE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 13, Turn-On Energy Loss vs Collector Current
400
V_CE = 200V
V_GE = +15V
T_J = 125°C
E_off 30A
300
200 ^Eon2^30A
100 ^{Eoff 15A}
E_on2 15A
E_off 7.5A
E_on2 7.5A
0
5 10 15 20 25 30 35 40 45 50
R_G, GATE RESISTANCE (OHMS)
FIGURE 15, Switching Energy Losses vs. Gate Resistance
APT32GU30K
160
140 _{VGE =15V,TJ=125°C}
120
V_GE =15V,T_J=25°C
100
80
60
40
20
V_CE = 200V
R_G = 20Ω
L = 100 µH
0
5 10 15 20 25 30 35
I_CE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 10, Turn-Off Delay Time vs Collector Current
140
120
100
T_J = 125°C, V_GE = 10V or 15V
80
60
40
T_J = 25°C, V_GE = 10V or 15V
20
R_G =20Ω, L = 100µH, V_CE = 200V
05
10
15 20
25
30
35
I_CE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 12, Current Fall Time vs Collector Current
300
T_J = 125°C, V_GE = 10V or 15V
250
200
150
V_CE = 200V
L = 100 µH
R_G = 20Ω
100
50
T_J = 25°C, V_GE = 10V or 15V
0
5 10 15 20 25 30 35
I_CE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 14, Turn Off Energy Loss vs Collector Current
300
250
V_CE = 200V
V_GE = +15V
R_G = 20Ω
E_off 30A
200
150
E_on2 30A
100
E_off 15A
50 _{Eon2 15A}
E_off 7.5A
0
E_on2 7.5A
0
25
50
75
100 125
T_J, JUNCTION TEMPERATURE (°C)
FIGURE 16, Switching Energy Losses vs Junction Temperature