APT32GU30K Datasheet, PDF (3/6 Pages) Advanced Power Technology – POWER MOS 7 IGBT

TYPICAL PERFORMANCE CURVES
60
VGE = 15V.
250µs PULSE TEST
<0.5 % DUTY CYCLE
50
T_C=25°C
40
30
T_C=-55°C
T_C=125°C
20
10
0
0 0.5
1
1.5
2
2.5
3
V_CE, COLLECTER-TO-EMITTER VOLTAGE (V)
FIGURE 1, Output Characteristics(V_GE = 15V)
100
250µs PULSE TEST
<0.5 % DUTY CYCLE
TJ = -55°C
80
60
40
TJ = 25°C
20
TJ = 125°C
0
01 2 3 4 5 6 7 8
V_GE, GATE-TO-EMITTER VOLTAGE (V)
FIGURE 3, Transfer Characteristics
5
TJ = 25°C.
4.5
250µs PULSE TEST
<0.5 % DUTY CYCLE
4
3.5
3
2.5
2
I_C= 30A
1.5
I_C= 15A
1
I_C= 7.5A
0.5
0
5 6 7 8 9 10 11 12 13 14 15 16
V_GE, GATE-TO-EMITTER VOLTAGE (V)
FIGURE 5, On State Voltage vs Gate-to- Emitter Voltage
1.2
1.15
1.10
1.05
1.0
0.95
0.9
0.85
0.8
-50 -25 0 25 50 75 100 125
T_J, JUNCTION TEMPERATURE (°C)
FIGURE 7, Breakdown Voltage vs. Junction Temperature
60
VGE = 10V.
250µs PULSE TEST
<0.5 % DUTY CYCLE
50
T_C=-55°C
40
T_C=25°C
30
T_C=125°C
20
APT32GU30K
10
0
0 0.5 1 1.5 2 2.5 3
V_CE, COLLECTER-TO-EMITTER VOLTAGE (V)
FIGURE 2, Output Characteristics (V_GE = 10V)
16
I_C = 15A
14 ^{TJ = 25°C}
V_CE = 60V
12
V_CE = 150V
10
8
V_CE = 240V
6
4
2
0
0
2
1.6
10 20 30 40 50 60 70
GATE CHARGE (nC)
FIGURE 4, Gate Charge
I_C = 15A
I_C = 30A
1.2
I_C = 7.5A
0.8
0.4
VGE = 15V.
250µs PULSE TEST
<0.5 % DUTY CYCLE
0
-50 -25 0 25 50 75 100 125
T_J, Junction Temperature (°C)
FIGURE 6, On State Voltage vs Junction Temperature
80
70
60
50
40
30
20
10
0
-50 -25 0 25 50 75 100 125 150
T_C, CASE TEMPERATURE (°C)
FIGURE 8, DC Collector Current vs Case Temperature