APT30M30B2FLL Datasheet, PDF (4/5 Pages) Advanced Power Technology – POWER MOS 7 FREDFET

400
OPERATION HERE
LIMITED BY R_DS (ON)
100
100µS
10
1mS
TC =+25°C
TJ =+150°C
SINGLE PULSE
1
1
10
100 300
V_DS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 10, MAXIMUM SAFE OPERATING AREA
16
I_D = 100A
10mS
12
VDS=60V
VDS=150V
8
VDS=240V
4
0
0
50
100 150 200 250
Q_g, TOTAL GATE CHARGE (nC)
FIGURE 12, GATE CHARGE vs GATE-TO-SOURCE VOLTAGE
120
100
t_d(off)
80 ^V_DD ^{= 300V}
R_G = 5Ω
60 ^{TJ = 125°C}
L = 100µH
40
20
t_d(on)
0
40 60 80 100 120 140 160
I_D (A)
FIGURE 14, DELAY TIMES vs CURRENT
3500
3000
2500
2000
V_DD = 200V
R_G = 5Ω
T_J = 125°C
L = 100µH
E_ON includes
diode reverse recovery.
1500
E_off
1000
E_on
500
0
40 60 80 100 120 140 160
I_D (A)
FIGURE 16, SWITCHING ENERGY vs CURRENT
20,000
10,000
1,000
APT30M30B2FLL_LFLL
Ciss
Coss
100
Crss
10
0
10
20
30
40
50
V_DS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 11, CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
300
100
TJ =+150°C
TJ =+25°C
10
1
0.3 0.5 0.7 0.9 1.1 1.3 1.5
V_SD, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
FIGURE 13, SOURCE-DRAIN DIODE FORWARD VOLTAGE
200
180
160
140
V_DD = 200V
R_G = 5Ω
T_J = 125°C
L = 100µH
120
t_f
100
80
60
t_r
40
20
0
40 60 80 100 120 140 160
I_D (A)
FIGURE 15, RISE AND FALL TIMES vs CURRENT
5000
4000
300
V_DD = 200V
I_D = 100A
T_J = 125°C
L = 100µH
E_ON includes
diode reverse recovery.
E_off
2000
E_on
1000
0
0 5 10 15 20 25 30 35 40 45 50
R_G, GATE RESISTANCE (Ohms)
FIGURE 17, SWITCHING ENERGY VS. GATE RESISTANCE