APT30M30B2FLL Datasheet, PDF (2/5 Pages) Advanced Power Technology – POWER MOS 7 FREDFET

DYNAMIC CHARACTERISTICS
APT30M30B2FLL_LFLL
Symbol Characteristic
Test Conditions
C_iss
C_oss
C_rss
Q_g
Q_gs
Q_gd
t_d(on)
t_r
t_d(off)
t_f
E_on
E_off
E_on
E_off
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge ³
Gate-Source Charge
Gate-Drain ("Miller ") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Switching Energy ⁷
Turn-off Switching Energy
Turn-on Switching Energy ⁷
Turn-off Switching Energy
V_GS = 0V
V_DS = 25V
f = 1 MHz
V_GS = 10V
V_DD = 150V
I_D = 100A @ 25°C
RESISTIVE SWITCHING
V_GS = 15V
V_DD = 150V
I_D = 100A @ 25°C
R_G = 0.6Ω
INDUCTIVE SWITCHING @ 25°C
V_DD = 200V, V_GS = 15V
I_D = 100A, R_G = 5Ω
INDUCTIVE SWITCHING @ 125°C
V_DD = 200V V_GS = 15V
I_D = 100A, R_G = 5Ω
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Symbol Characteristic / Test Conditions
MIN
MIN
TYP
7030
1895
110
140
41
70
15
22
35
8
925
1345
1055
1485
MAX
UNIT
pF
nC
ns
µJ
TYP MAX UNIT
I_S
Continuous Source Current (Body Diode)
I_{SM Pulsed Source Current} 1 _{(Body Diode)}
V_{SD Diode Forward Voltage} 2 _{(VGS = 0V, IS = -100A)}
dv_/dt
Peak Diode Recovery ^dv/_dt ⁶
t_rr
Reverse Recovery Time
(I_S = -100A, ^di/_dt = 100A/µs)
Reverse Recovery Charge
Q_rr
(I_S = -100A, ^di/_dt = 100A/µs)
Peak Recovery Current
I_RRM
(I_S = -100A, ^di/_dt = 100A/µs)
T_j = 25°C
T_j = 125°C
T_j = 25°C
T_j = 125°C
T_j = 25°C
T_j = 125°C
100 _Amps
415
1.3 Volts
8
V/ns
250
ns
500
1.4
µC
4.9
14
Amps
25
THERMAL CHARACTERISTICS
Symbol Characteristic
MIN TYP MAX UNIT
R_θJC
R_θJA
Junction to Case
Junction to Ambient
0.18
40
°C/W
1 Repetitive Rating: Pulse width limited by maximum junction
4 Starting T_j = +25°C, L = 0.60mH, R_G = 25Ω, Peak I_L = 100A
temperature
5 The maximum current is limited by lead temperature
2 Pulse Test: Pulse width < 380 µs, Duty Cycle < 2%
3 See MIL-STD-750 Method 3471
6 ^dv/_dt numbers reflect the limitations of the test circuit rather than the
device itself. I_S ≤ -I_D100A ^di/_dt ≤ 700A/µs V_R ≤ 300V T_J ≤ 150°C
7 Eon includes diode reverse recovery. See figures 18, 20.
APT Reserves the right to change, without notice, the specifications and inforation contained herein.
0.20
0.18
0.9
0.16
0.14
0.7
0.12
0.10
0.08
0.06
0.04
0.02
0
10^-5
0.5
Note:
t1
0.3
t2
Duty Factor D = ^t1/t2
0.1
Peak TJ = PDM x Z_θJC + TC
0.05
SINGLE PULSE
10^-4
10^-3
10^-2
10^-1
1.0
RECTANGULAR PULSE DURATION (SECONDS)
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION