APT30GP60B Datasheet, PDF (4/6 Pages) Advanced Power Technology – POWER MOS 7 IGBT

25
20
V_GE= 10V
15
V_GE= 15V
10
5 ^VCE ^{= 400V}
T_J = 25°C, T_J =125°C
R_G = 5Ω
L = 100 µH
0
0 10 20 30 40 50 60 70
I_CE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 9, Turn-On Delay Time vs Collector Current
50
T_J = 25 or 125°C,V_GE = 10V
40
30
20
10
T_J = 25 or 125°C,V_GE = 15V
0 ^{RG = 5Ω, L = 100µH, VCE = 400V}
0 10 20 30 40 50 60 70
I_CE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 11, Current Rise Time vs Collector Current
1400
1200
V_CE = 400V
V_GE = +15V
R_G = 5 Ω
T_J = 125°C,V_GE =15V
1000
800
T_J = 125°C,V_GE =10V
600
T_J = 25°C,V_GE =15V
400
T_J = 25°C,V_GE =10V
200
0
0 10 20 30 40 50 60 70
I_CE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 13, Turn-On Energy Loss vs Collector Current
2500
2000
V_CE = 400V
V_GE = +15V
T_J = 125°C
1500
1000
E_on2, 60A
E_off, 60A
E_on2, 30A
500
E_off, 30A
E_on2, 15A
E_off, 15A
0
0
10 20 30 40 50 60
R_G, GATE RESISTANCE (OHMS)
FIGURE 15, Switching Energy Losses vs. Gate Resistance
APT30GP60B
100
90
V_GE =15V,T_J=125°C
V_CE = 400V
R_G = 5Ω
L = 100 µH
80
70
60
V_GE
=10V,T_J=125°C
V_GE
=15V,T_J=25°C
50
40
V_GE =10V,T_J=25°C
30
20
10
0
0 10 20 30 40 50 60 70
I_CE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 10, Turn-Off Delay Time vs Collector Current
100 _{RG = 5Ω, L = 100µH, VCE = 400V}
80
T_J = 125°C, V_GE = 10V or 15V
60
40
T_J = 25°C, V_GE = 10V or 15V
20
0
0 10 20 30 40 50 60 70
I_CE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 12, Current Fall Time vs Collector Current
1400
1200
V_CE = 400V
V_GE = +15V
R_G = 5 Ω
1000
T_J = 125°C, V_GE = 10V or 15V
800 ^TJ ^{= 25°C, V}GE ^{= 10V or 15V}
600
400
200
0
0 10 20 30 40 50 60
I_CE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 14, Turn Off Energy Loss vs Collector Current
1600
V_CE = 400V
V_GE = +15V
R_G = 5 Ω
1200
E_on2,60A
800
E_off,60A
400
E_on2,30A
E_off, 30A
E_on2,15A
0
E_off, 15A
0
25
50
75
100 125
T_J, JUNCTION TEMPERATURE (°C)
FIGURE 16, Switching Energy Losses vs Junction Temperature