APT30GP60B Datasheet, PDF (3/6 Pages) Advanced Power Technology – POWER MOS 7 IGBT

TYPICAL PREFORMANCE CURVES
60
VGE = 15V.
250µs PULSE TEST
<0.5 % DUTY CYCLE
50
T_C=-55°C
40
30
20
10 _TC=125°C
T_C=25°C
0
0 0.5 1 1.5 2 2.5 3
V_CE, COLLECTER-TO-EMITTER VOLTAGE (V)
FIGURE 1, Output Characteristics(V_GE = 15V)
200
250µs PULSE TEST
180 ^{<0.5 % DUTY CYCLE}
160
TJ = -55°C
140
120
100
80
60
TJ = 25°C
40
TJ = 125°C
20
0
0
2
4
6
8
10 12
V_GE, GATE-TO-EMITTER VOLTAGE (V)
FIGURE 3, Transfer Characteristics
4
TJ = 25°C.
250µs PULSE TEST
3.5 <0.5 % DUTY CYCLE
3
I_C= 60A
2.5
I_C= 30A
2
I_C= 15A
1.5
1
0.5
0
6
8
10
12
14
16
V_GE, GATE-TO-EMITTER VOLTAGE (V)
FIGURE 5, On State Voltage vs Gate-to- Emitter Voltage
1.2
1.15
1.10
1.05
1.0
0.95
0.90
0.85
0.8
-50 -25 0 25 50 75 100 125 150
T_J, JUNCTION TEMPERATURE (°C)
FIGURE 7, Breakdown Voltage vs. Junction Temperature
60
VGE = 10V.
250µs PULSE TEST
<0.5 % DUTY CYCLE
50
40
T_C=-55°C
APT30GP60B
30
20
10
T_C=125°C
T_C=25°C
0
0 0.5 1 1.5 2 2.5 3
V_CE, COLLECTER-TO-EMITTER VOLTAGE (V)
FIGURE 2, Output Characteristics (V_GE = 10V)
16
I_C = 30A
14 ^{TJ = 25°C}
12
V_CE=120V
10
V_CE=300V
8
V_CE=480V
6
4
2
0
0 10 20 30 40 50 60 70 80 90 100
GATE CHARGE (nC)
FIGURE 4, Gate Charge
3.5
VGE = 15V.
250µs PULSE TEST
3 ^{<0.5 % DUTY CYCLE}
I_C= 60A
2.5
I_C= 30A
2
I_C=15A
1.5
1
0.5
0
-50 -25 0 25 50 75 100 125
T_J, JUNCTION TRMPERATURE (°C)
FIGURE 6, On State Voltage vs Junction Temperature
140
120
100
80
60
40
20
0
-50 -25 0 25 50 75 100 125 150
T_C, CASE TEMPERATURE (°C)
FIGURE 8, DC Collector Current vs Case Temperature