APT20N60BC3 Datasheet, PDF (4/5 Pages) Advanced Power Technology – Super Junction MOSFET

Typical Performance Curves
62
OPERATION HERE
LIMITED BY R_DS (ON)
10
100µS
5
TC =+25°C
1 ^{TJ =+150°C}
SINGLE PULSE
0.6
1
10
100
600
V_DS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 10, MAXIMUM SAFE OPERATING AREA
16
I_D = 20.7A
1mS
10mS
12
VDS= 120V
8
VDS= 300V
VDS= 480V
4
0
0 20 40 60 80 100 120 140
Q_g, TOTAL GATE CHARGE (nC)
FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE
100
90
80
t_d(off)
70
V_DD = 400V
60 ^R_G ^{= 5Ω}
50 ^{TJ = 125°C}
L = 100µH
40
30
20
10
t_d(on)
0
0 5 10 15 20 25 30 35
I_D (A)
FIGURE 14, DELAY TIMES vs CURRENT
600
500
400
V_DD = 400V
R_G = 5Ω
T_J = 125°C
L = 100µH
E_ON includes
diode reverse recovery.
300
E_off
200
E_on
100
0
0 5 10 15 20 25 30 35
I_D (A)
FIGURE 16, SWITCHING ENERGY vs CURRENT
20,000
10,000
1,000
100
APT20N60B_SC3
Ciss
Coss
10
Crss
0
10
20
30
40
50
V_DS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 11, CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
200
100
TJ =+150°C
TJ =+25°C
10
1
0.3 0.5 0.7 0.9 1.1 1.3 1.5
V_SD, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
FIGURE 13, SOURCE-DRAIN DIODE FORWARD VOLTAGE
50
V_DD = 400V
R_G = 5Ω
40 ^{TJ = 125°C}
L = 100µH
t_f
30
20
10
t_r
0
0 5 10 15 20 25 30 35
I_D (A)
FIGURE 15, RISE AND FALL TIMES vs CURRENT
700
V_DD = 400V
600
I_D = 20.7A
T_J = 125°C
E_off
L = 100µH
500 E_ON includes
diode reverse recovery.
400
E_on
300
200
100
0
0 5 10 15 20 25 30 35 40 45 50
R_G, GATE RESISTANCE (Ohms)
FIGURE 17, SWITCHING ENERGY VS. GATE RESISTANCE