APT20N60BC3 Datasheet, PDF (1/5 Pages) Advanced Power Technology – Super Junction MOSFET

APT20N60BC3
APT20N60SC3
600V 20.7A 0.190Ω
Super Junction MOSFET
COOLMOS
Power Semiconductors
TO-247
D³PAK
• Ultra low R_DS(ON)
• Low Miller Capacitance
• Ultra Low Gate Charge, Q_g
• Avalanche Energy Rated
• TO-247 or Surface Mount D³PAK Package
MAXIMUM RATINGS
D
G
S
All Ratings: T_C = 25°C unless otherwise specified.
Symbol Parameter
APT20N60BC3_SC3 UNIT
V_DSS
I_D
I_DM
V_GS
V_GSM
Drain-Source Voltage
Continuous Drain Current @ T_C = 25°C
Pulsed Drain Current ¹
Gate-Source Voltage Continuous
Gate-Source Voltage Transient
600
Volts
20.7
Amps
62
±20
Volts
±30
P_D
Total Power Dissipation @ T_C = 25°C
Linear Derating Factor
208
1.67
Watts
W/°C
T_J,T_STG
T_L
dv_/dt
I_AR
E_AR
E_AS
Operating and Storage Junction Temperature Range
Lead Temperature: 0.063" from Case for 10 Sec.
Drain-Source Voltage slope (V_DS = 480V, I_D = 20.7A, T_J = 125°C)
Repetitive Avalanche Current ⁷
Repetitive Avalanche Energy ⁷
Single Pulse Avalanche Energy ⁴
-55 to 150
260
50
20
1
690
°C
V/ns
Amps
mJ
STATIC ELECTRICAL CHARACTERISTICS
Symbol Characteristic / Test Conditions
MIN TYP MAX
BV_DSS
R_DS(on)
Drain-Source Breakdown Voltage (V_GS = 0V, I_D = 250µA)
Drain-Source On-State Resistance ² (V_GS = 10V, I_D = 13.1A)
600
0.16 0.19
I_DSS
Zero Gate Voltage Drain Current (V_DS = 600V, V_GS = 0V)
Zero Gate Voltage Drain Current (V_DS = 600V, V_GS = 0V, T_C = 150°C)
0.05 25
250
I_GSS Gate-Source Leakage Current (V_GS = ±20V, V_DS = 0V)
±100
V_GS(th) Gate Threshold Voltage (V_DS = V_GS, I_D = 1mA)
2.1
3
3.9
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
UNIT
Volts
Ohms
µA
nA
Volts
"COOLMOS^™ comprise a new family of transistors developed by Infineon Technologies AG. "COOLMOS" is a trade-
mark of Infineon Technologies AG"