APT20M20B2LL_04 Datasheet, PDF (4/5 Pages) Advanced Power Technology – POWER MOS 7 MOSFET

508
OPERATION HERE
LIMITED BY R_DS (ON)
100
100µS
1mS
10
10mS
TC =+25°C
TJ =+150°C
SINGLE PULSE
1
1
10
100 200
V_DS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 10, MAXIMUM SAFE OPERATING AREA
16
I_D = 75A
12
VDS=40V
VDS=100V
VDS=160V
8
4
0
0 20 40 60 80 100 120 140 160 180
Q_g, TOTAL GATE CHARGE (nC)
FIGURE 12, GATE CHARGE vs GATE-TO-SOURCE VOLTAGE
90
80
t_d(off)
70
60 ^VDD ^{= 130V}
R_G = 5Ω
50 _{TJ = 125°C}
40 ^{L = 100µH}
30
t_d(on)
20
10
0
20 40 60 80 100 120 140
I_D (A)
FIGURE 14, DELAY TIMES vs CURRENT
1400
1200
1000
800
V_DD = 130V
R_G = 5Ω
T_J = 125°C
L = 100µH
E_ON includes
diode reverse recovery.
600
E_on
400
200
E_off
0
20 40 60 80 100 120 140
I_D (A)
FIGURE 16, SWITCHING ENERGY vs CURRENT
20,000
10,000
1,000
APT20M20B2LL_LLL
Ciss
Coss
100
Crss
10
0
10
20
30
40
50
V_DS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 11, CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
200
100
TJ =+150°C
TJ =+25°C
10
1
0.3 0.5 0.7 0.9 1.1 1.3 1.5
V_SD, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
FIGURE 13, SOURCE-DRAIN DIODE FORWARD VOLTAGE
160
140
120
V_DD = 130V
R_G = 5Ω
T_J = 125°C
L = 100µH
100
80
t_f
60
t_r
40
20
0
20 40 60 80 100 120 140
I_D (A)
FIGURE 15, RISE AND FALL TIMES vs CURRENT
2500
2000
E_off
1500
E_on
1000
V_DD = 130V
I_D = 100A
500
T_J = 125°C
L = 100µH
E_ON includes
diode reverse recovery.
0
0 5 10 15 20 25 30 35 40 45 50
R_G, GATE RESISTANCE (Ohms)
FIGURE 17, SWITCHING ENERGY VS. GATE RESISTANCE