APT20M20B2LL_04 Datasheet, PDF (3/5 Pages) Advanced Power Technology – POWER MOS 7 MOSFET

Typical Performance Curves
Junction
temp. ( ”C)
Power
(Watts)
Case temperature
RC MODEL
0.0844
0.138
0.0124F
0.218F
FIGURE 2, TRANSIENT THERMAL IMPEDANCE MODEL
200
180
160
VDS> ID (ON) x RDS(ON) MAX.
250 µSEC. PULSE TEST
@ <0.5 % DUTY CYCLE
140
120
100
TJ = +125°C
80
TJ = +25°C
60
TJ = -55°C
40
20
0
0 1 2 3 4 5 6 7 8 9 10
V_GS, GATE-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 4, TRANSFER CHARACTERISTICS
120
100
80
60
40
20
0
25
50
75
100 125 150
T_C, CASE TEMPERATURE (°C)
FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE
2.5
I_D = 50A
V_GS = 10V
2.0
1.5
1.0
0.5
0.0
-50 -25 0 25 50 75 100 125 150
T_J, JUNCTION TEMPERATURE (°C)
FIGURE 8, R_DS(ON) vs. TEMPERATURE
APT20M20B2LL_LLL
250
VGS =15 &10V
9V
200
150
7.5V
7V
100
6.5
50
6V
5.5V
0
0
5
10 15 20 25 30
V_DS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 3, LOW VOLTAGE OUTPUT CHARACTERISTICS
1.40
1.30
NORMALIZED TO
V_GS = 10V @ I_D = 50A
1.20
1.10
VGS=10V
1.00
0.90
VGS=20V
0.80
0
1.15
20 40 60 80 100 120 140 160
I_D, DRAIN CURRENT (AMPERES)
FIGURE 5, R_DS(ON)vs DRAIN CURRENT
1.10
1.05
1.00
0.95
0.90
-50 -25 0 25 50 75 100 125 150
T_J, JUNCTION TEMPERATURE (°C)
FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE
1.2
1.1
1.0
0.9
0.8
0.7
0.6
-50 -25 0 25 50 75 100 125 150
T_C, CASE TEMPERATURE (°C)
FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE