APT20M16B2FLL_04 Datasheet, PDF (4/5 Pages) Advanced Power Technology – POWER MOS 7 FREDFET

400
OPERATION HERE
LIMITED BY R_DS (ON)
100
50
100µS
1mS
10
10mS
TC =+25°C
TJ =+150°C
SINGLE PULSE
1
1
10
100 200
V_DS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 10, MAXIMUM SAFE OPERATING AREA
16
I_D = 100A
14
12
VDS=40V
10
VDS=100V
8
VDS=160V
6
4
2
0
0 20 40 60 80 100 120 140 160 180 200
Q_g, TOTAL GATE CHARGE (nC)
FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE
100
90
80
t_d(off)
70 _{VDD = 133V}
60 ^RG ^{= 5Ω}
T_J = 125°C
50 _{L = 100µH}
40
30
t_d(on)
20
10
0
20 40 60 80 100 120 140 160
I_D (A)
FIGURE 14, DELAY TIMES vs CURRENT
2000
1500
V_DD = 133V
R_G = 5Ω
T_J = 125°C
L = 100µH
E_ON includes
diode reverse recovery
E_off
1000
500
E_on
0
20 40 60 80 100 120 140 160
I_D (A)
FIGURE 16, SWITCHING ENERGY vs CURRENT
20,000
10,000
5,000
1,000
500
APT20M16B2FLL_LFLL
Ciss
Coss
100
Crss
0
10
20
30
40
50
V_DS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 11,CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
220
100
50
TJ =+150°C
TJ =+25°C
10
5
1
0.3 0.5 0.7 0.9 1.1 1.3 1.5
V_SD, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
FIGURE 13, SOURCE-DRAIN DIODE FORWARD VOLTAGE
160
140
120
V_DD = 133V
R_G = 5Ω
T_J = 125°C
L = 100µH
100
t_f
80
60
40
t_r
20
0
20 40 60 80 100 120 140 160
I_D (A)
FIGURE 15, RISE AND FALL TIMES vs CURRENT
3500
3000
2500
V_DD = 133V
I_D = 100A
T_J = 125°C
L = 100µH
E_ON includes
diode reverse recovery
E_off
2000
E_on
1500
1000
500
0
0 5 10 15 20 25 30 35 40 45 50
R_G, GATE RESISTANCE (Ohms)
FIGURE 17, SWITCHING ENERGY VS. GATE RESISTANCE