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APT20M16B2FLL_04 Datasheet, PDF (2/5 Pages) Advanced Power Technology – POWER MOS 7 FREDFET
DYNAMIC CHARACTERISTICS
APT20M16 B2FLL_LFLL
Symbol Characteristic
Test Conditions
Ciss
Coss
Crss
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Eon
Eoff
Eon
Eoff
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge 3
Gate-Source Charge
Gate-Drain ("Miller ") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Switching Energy 6
Turn-off Switching Energy
Turn-on Switching Energy 6
Turn-off Switching Energy
VGS = 0V
VDS = 25V
f = 1 MHz
VGS = 10V
VDD = 100V
ID = 100A @ 25°C
RESISTIVE SWITCHING
VGS = 15V
VDD = 100V
ID = 100A @ 25°C
RG = 0.6Ω
INDUCTIVE SWITCHING @ 25°C
VDD = 133V, VGS = 15V
ID = 100A, RG = 5Ω
INDUCTIVE SWITCHING @ 125°C
VDD = 133V, VGS = 15V
ID = 100A, RG = 5Ω
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Symbol Characteristic / Test Conditions
MIN
MIN
TYP
7220
2330
145
140
65
120
15
31
29
4
850
930
935
985
MAX
UNIT
pF
nC
ns
µJ
TYP MAX UNIT
IS
Continuous Source Current (Body Diode)
ISM Pulsed Source Current 1 (Body Diode)
VSD Diode Forward Voltage 2 (VGS = 0V, IS = -100A)
dv/dt
Peak Diode Recovery dv/dt 5
trr
Reverse Recovery Time
(IS = -100A, di/dt = 100A/µs)
Reverse Recovery Charge
Qrr
(IS = -100A, di/dt = 100A/µs)
Peak Recovery Current
IRRM
(IS = -100A, di/dt = 100A/µs)
Tj = 25°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
100 Amps
400
1.3 Volts
8
V/ns
230
ns
450
0.9
µC
3.4
11
Amps
20
THERMAL CHARACTERISTICS
Symbol Characteristic
MIN TYP MAX UNIT
RθJC
RθJA
Junction to Case
Junction to Ambient
0.18
40
°C/W
1 Repetitive Rating: Pulse width limited by maximum junction
temperature
2 Pulse Test: Pulse width < 380 µs, Duty Cycle < 2%
3 See MIL-STD-750 Method 3471
4 Starting Tj = +25°C, L = 0.60mH, RG = 25Ω, Peak IL = 100A
5 dv/dt numbers reflect the limitations of the test circuit rather than the
device itself. IS ≤ -ID100A di/dt ≤ 700A/µs VR ≤ 200V TJ ≤ 150°C
6 Eon includes diode reverse recovery. See figures 18, 20.
7 The maximum current is limited by lead temperature
APT Reserves the right to change, without notice, the specifications and information contained herein.
0.20
0.9
0.16
0.7
0.12
0.08
0.04
0
10-5
0.5
Note:
0.3
0.1
0.05
SINGLE PULSE
t1
t2
Duty Factor D = t1/t2
Peak TJ = PDM x ZθJC + TC
10-4
10-3
10-2
10-1
1.0
RECTANGULAR PULSE DURATION (SECONDS)
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION