APT20GT60BR Datasheet, PDF (4/5 Pages) Advanced Power Technology – The Thunderbolt IGBT™ is a new generation of high voltage power IGBTs.

4.0
3.5
I_C1
3.0
2.5
I_C2
2.0
0.5 I_C2
1.5
1.0
-50 -25 0 25 50 75 100 125 150
T_J, JUNCTION TEMPERATURE (°C)
Figure 8, Typical V_CE(SAT) Voltage vs Junction Temperature
1.2
1.1
1
APT20GT60BR
40
30
20
10
0 ₂₅
50
75 100 125 150
T_C, CASE TEMPERATURE (°C)
Figure 9, Maximum Collector Current vs Case Temperature
1.0
V_CC = 0.66 V_CES
V_GE = +15V
T_J = +25°C
0.8
I_C = I_C2
0.6
E_off
0.9
0.4
E_on
0.8
0.2
0.7-50 _{-25 0 25 50 75 100 125 150}
T_J, JUNCTION TEMPERATURE (°C)
Figure 10, Breakdown Voltage vs Junction Temperature
2.0
I_C1
1.0
I_C2
0.5 I_C2
V_CC = 0.66 V_CES
V_GE = +15V
R_G = 10 W
0.1
-50 -25 0 25 50 75 100 125 150
T_J, JUNCTION TEMPERATURE (°C)
Figure 12, Typical Switching Energy Losses vs. Junction Temperature
100
10
00
20
40
60
80
100
R_G, GATE RESISTANCE (OHMS)
Figure 11, Typical Switching Energy Losses vs Gate Resistance
.6
V_CC = 0.66 V_CES
V_GE = +15V
.5
T_J = +125°C
R_G = 10 W
.4
E_off
.3
.2
E_on
.1
00
10
20
30
I_C, COLLECTOR CURRENT (AMPERES)
Figure 13, Typical Switching Energy Losses vs Collector Current
For Both:
Duty Cycle = 50%
T_J = +125°C
T_sink = +90°C
Gate drive as specified
Power dissapation = 49W
I_LOAD = I_RMS of fundamental
1
0.1
1.0
10
100
F, FREQUENCY (KHz)
Figure 14,Typical Load Current vs Frequency
1000