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APT20GT60BR Datasheet, PDF (3/5 Pages) Advanced Power Technology – The Thunderbolt IGBT™ is a new generation of high voltage power IGBTs.
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APT20GT60BR
40
30
VGE=15, 10 & 9V
8V
40
VGE=15, 10 & 9V
8V
30
20
20
7V
7V
10
6V
0
5V
0
4
8
12
16
20
VCE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS)
Figure 1, Typical Output Characteristics (TJ = 25°C)
60
250µSec. Pulse Test
VGE = 15V
50
TC=-55°C
TC=+25°C
40
TC=+150°C
30
20
10
0
0
1
2
3
4
5
VCE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS)
Figure 3, Typical Output Characteristics @ VGE = 15V
3,000
1,000
Cies
500
100
50
f = 1MHz
Coes
Cres
10
6V
5V
0
0
4
8
12
16
20
VCE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS)
Figure 2, Typical Output Characteristics (TJ = 150°C)
80
OPERATION
LIMITED
BY
VCE (SAT)
100µS
10
5
1mS
TC =+25°C
TJ =+150°C
SINGLE PULSE
10mS
1
1
5 10
50 100
600
VCE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS)
Figure 4, Maximum Forward Safe Operating Area
20
IC = IC2
TJ = +25°C
16
VCE=120V
VCE=300V
12
VCE=480V
8
4
10
0.01
0.1
1.0
10
50
VCE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS)
Figure 5, Typical Capacitance vs Collector-To-Emitter Voltage
1.0
0.5 D=0.5
0
0
40
80
120
160
Qg, TOTAL GATE CHARGE (nC)
Figure 6, Gate Charges vs Gate-To-Emitter Voltage
0.2
0.1
0.1
0.05
0.05
0.02
Note:
0.01
0.01
t1
0.005
SINGLE PULSE
t2
Duty Factor D = t1/t2
Peak TJ = PDM x ZθJC + TC
0.001 10-5
10-4
10-3
10-2
10-1
1.0
10
RECTANGULAR PULSE DURATION (SECONDS)
Figure 7, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration
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