APT15GT120BRDQ1 Datasheet, PDF (4/9 Pages) Advanced Power Technology – Thunderbolt IGBT

14
12
V_GE = 15V
10
8
6
4
V_CE = 600V
2 ^T_J ^{= 25°C, T}_J ^=125°C
R_G = 5Ω
L = 100 µH
0
5 10 15 20 25 30 35
I_CE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 9, Turn-On Delay Time vs Collector Current
40
R_G = 5Ω, L = 100µH, V_CE = 800V
35
30
25
20
15
10
T_J = 25 or 125°C,V_GE = 15V
5
05
10
15
20
25
30
35
I_CE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 11, Current Rise Time vs Collector Current
4000
3500
V_CE = 800V
V_GE = +15V
R_G = 5Ω
3000
2500
T_J = 125°C
2000
1500
1000
500
T_J = 25°C
0
5 10 15 20 25 30 35
I_CE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 13, Turn-On Energy Loss vs Collector Current
8000
7000
V_CE = 800V
V_GE = +15V
T_J = 125°C
E_on2,30A
6000
5000
4000
3000
2000
E_on2,15A
E_off,30A
1000
E_off,15A
E_on2,7.5A
0
E_off,7.5A
0
10
20
30
40
50
R_G, GATE RESISTANCE (OHMS)
FIGURE 15, Switching Energy Losses vs. Gate Resistance
APT15GT120BRDQ1(G)
120
100
80
V_GE =15V,T_J=125°C
60
V_GE =15V,T_J=25°C
40
20 V_CE = 800V
R_G = 5Ω
L = 100 µH
0
5 10 15 20 25 30 35
I_CE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 10, Turn-Off Delay Time vs Collector Current
45 _{RG = 5Ω, L = 100µH, VCE = 800V}
40
35
30
T_J = 125°C, V_GE = 15V
25
T_J = 25°C, V_GE = 15V
20
15
10
5
05
10
15
20
25
30
35
I_CE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 12, Current Fall Time vs Collector Current
1000
800
V_CE = 800V
V_GE = +15V
R_G = 5Ω
T_J = 125°C
600
400
200
T_J = 25°C
05
10
15
20
25
30
35
I_CE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 14, Turn Off Energy Loss vs Collector Current
4000
3500
V_CE = 800V
V_GE = +15V
R_G = 5Ω
3000
E_on2,30A
2500
2000
1500
1000
E_on2,15A
E_off,30A
500
0
E_on2,7.5A
E_off,7.5A
E_off,15A
0
25
50
75
100 125
T_J, JUNCTION TEMPERATURE (°C)
FIGURE 16, Switching Energy Losses vs Junction Temperature