APT150GN120J Datasheet, PDF (4/6 Pages) Advanced Power Technology – IGBT

60
V_GE = 15V
50
40
30
20
10
V_CE = 800V
T_J = 25°C, or 125°C
R_G = 1.0Ω
L = 100µH
0
0 50 100 150 200 250 300 350
I_CE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 9, Turn-On Delay Time vs Collector Current
400
R_G = 1.0Ω, L = 100µH, V_CE = 800V
350
300
250
T_J = 25 or 125°C,V_GE = 15V
200
150
100
50
0 _{0 50 100 150 200 250 300 350}
I_CE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 11, Current Rise Time vs Collector Current
120,000
100,000
V_CE = 800V
V_GE = +15V
R_G = 1.0Ω
80,000
T_J = 125°C
60,000
40,000
20,000
T_J = 25°C
0
0 50 100 150 200 250 300 350
I_CE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 13, Turn-On Energy Loss vs Collector Current
200,000
160,000
V_CE = 800V
V_GE = +15V
T_J = 125°C
E_on2,300A
120,000
80,000
E_off,300A
E_on2,150A
40,000
E_off,150A
E_on2,75A
0
E_off,75A
0
5
10
15
20
R_G, GATE RESISTANCE (OHMS)
FIGURE 15, Switching Energy Losses vs. Gate Resistance
APT150GN120J
1000
800
600
V_GE =15V,T_J=125°C
V_GE =15V,T_J=25°C
400
200
V_CE = 800V
R_G = 1.0Ω
L = 100µH
0
0 50 100 150 200 250 300 350
I_CE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 10, Turn-Off Delay Time vs Collector Current
250
200
150
T_J = 125°C, V_GE = 15V
100
T_J = 25°C, V_GE = 15V
50
0 ^{RG = 1.0Ω, L = 100µH, VCE = 800V}
0 50 100 150 200 250 300 350
I_CE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 12, Current Fall Time vs Collector Current
50,000
40,000
V_CE = 800V
V_GE = +15V
R_G = 1.0Ω
T_J = 125°C
30,000
20,000
10,000
T_J = 25°C
0
0 50 100 150 200 250 300 350
I_CE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 14, Turn Off Energy Loss vs Collector Current
120,000
100,000
V_CE = 800V
V_GE = +15V
R_G = 1.0Ω
E_on2,300A
80,000
60,000
40,000
E_off,300A
E_on2,150A
20,000
E_off,150A
E_on2,75A
0
E_off,75A
0
25
50
75
100 125
T_J, JUNCTION TEMPERATURE (°C)
FIGURE 16, Switching Energy Losses vs Junction Temperature