APT150GN120J Datasheet, PDF (3/6 Pages) Advanced Power Technology – IGBT

TYPICAL PERFORMANCE CURVES
300
V_GE = 15V
250
T_J = -55°C
200
T_J = 25°C
T_J = 125°C
T_J = 175°C
150
100
50
0
0 0.5 1.0 1.5 2.0 2.5 3.0 3.5
V_CE, COLLECTER-TO-EMITTER VOLTAGE (V)
FIGURE 1, Output Characteristics(T_J = 25°C)
300
250µs PULSE
TEST<0.5 % DUTY
CYCLE
250
200
T_J = -55°C
150
100
50
T_J = 25°C
T_J = 125°C
0
0
2
4
6
8
10 12
V_GE, GATE-TO-EMITTER VOLTAGE (V)
FIGURE 3, Transfer Characteristics
4.0
3.5
I_C = 300A
3.0
T_J = 25°C.
250µs PULSE TEST
<0.5 % DUTY CYCLE
2.5
I_C = 150A
2.0
1.5
I_C = 75A
1.0
0.5
0
8
10
12
14
16
V_GE, GATE-TO-EMITTER VOLTAGE (V)
FIGURE 5, On State Voltage vs Gate-to- Emitter Voltage
1.15
1.10
1.05
1.00
0.95
0.90
0.85
0.80
0.75
0.70
-50 -25 0 25 50 75 100 125 150
T_J, JUNCTION TEMPERATURE (°C)
FIGURE 7, Threshold Voltage vs. Junction Temperature
APT150GN120J
400
350
6.5, 10 &15V
300
6V
250
200
5.5V
150
5V
100
50
4.5V
4V
0
0
5
10 15 20 25 30
V_CE, COLLECTER-TO-EMITTER VOLTAGE (V)
FIGURE 2, Output Characteristics (T_J = 125°C)
16
I_C = 150A
14 ^{TJ = 25°C}
V_CE = 240V
12
V_CE = 600V
10
8
V_CE = 960V
6
4
2
0
0
3.5
200 400 600 800
GATE CHARGE (nC)
FIGURE 4, Gate Charge
1000
3
I_C = 300A
2.5
2
I_C = 150A
1.5
I_C = 75A
1
0.5
V_GE = 15V.
250µs PULSE TEST
<0.5 % DUTY CYCLE
0
-50 -25 0 25 50 75 100 125 150
T_J, Junction Temperature (°C)
FIGURE 6, On State Voltage vs Junction Temperature
300
250
200
150
100
50
0
-50 -25 0 25 50 75 100 125 150
T_C, CASE TEMPERATURE (°C)
FIGURE 8, DC Collector Current vs Case Temperature