APT13GP120BDQ1 Datasheet, PDF (4/9 Pages) Advanced Power Technology – POWER MOS 7 IGBT

12
10
V_GE = 15V
8
6
4
2
V_CE = 600V
T_J = 25°C, T_J =125°C
R_G = 5Ω
L = 100 µH
0
5
10
15
20
25
30
I_CE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 9, Turn-On Delay Time vs Collector Current
30 _{RG = 5Ω, L = 100µH, VCE = 600V}
25
20
15
10
T_J = 25 or 125°C,V_GE = 15V
5
05
10
15
20
25
30
I_CE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 11, Current Rise Time vs Collector Current
1400
1200
1000
V_CE = 600V
V_GE = +15V
R_G = 5Ω
T_J = 125°C,V_GE =15V
800
600
400
200
T_J = 25°C,V_GE =15V
0
5
10
15
20
25
30
I_CE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 13, Turn-On Energy Loss vs Collector Current
1800
1600
1400
E_off,26A
E_on2,26A
1200
1000
E_off,13A
800
E_on2,13A
600
E_off,6.5A
400
200
0
V_CE = 600V ^Eon2,^6.5A
V_GE = +15V
T_J = 125°C
0
10
20
30
40
50
R_G, GATE RESISTANCE (OHMS)
FIGURE 15, Switching Energy Losses vs. Gate Resistance
APT13GP120BDQ1(G)
100
90
80
70
60
50
V_GE =15V,T_J=125°C
40
30
20
V_CE = 600V
10 ^R_G ^{= 5Ω}
L = 100 µH
V_GE =15V,T_J=25°C
0
5
10
15
20
25
30
I_CE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 10, Turn-Off Delay Time vs Collector Current
300
R_G = 5Ω, L = 100µH, V_CE = 600V
250
200
T_J = 125°C, V_GE = 15V
150
100
T_J = 25°C, V_GE = 15V
50
05
10
15
20
25
30
I_CE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 12, Current Fall Time vs Collector Current
1600
1400
1200
V_CE = 600V
V_GE = +15V
R_G = 5Ω
T_J = 125°C, V_GE = 15V
1000
800
600
400
200
T_J = 25°C, V_GE = 15V
05
10
15
20
25
30
I_CE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 14, Turn Off Energy Loss vs Collector Current
1600
1400
V_CE = 600V
V_GE = +15V
R_G = 5Ω
1200
1000
E_on2,26A
800
E_off,26A
600
E_on2,13A
E_off,13A
400
E_on2,6.5A
200
0
E_off,6.5A
25
50
75
100
125
T_J, JUNCTION TEMPERATURE (°C)
FIGURE 16, Switching Energy Losses vs Junction Temperature