APT13GP120BDQ1 Datasheet, PDF (3/9 Pages) Advanced Power Technology – POWER MOS 7 IGBT

TYPICAL PERFORMANCE CURVES
40
35
30
25
T_J = -55°C
20
15
T_J = 125°C
10
5 ^{TJ = 25°C}
0
0
1
2
3
4
5
6
V_CE, COLLECTER-TO-EMITTER VOLTAGE (V)
FIGURE 1, Output Characteristics(T_J = 25°C)
40
250µs PULSE
TEST<0.5 % DUTY
35
CYCLE
30
25
20
T_J = -55°C
15
T_J = 25°C
10
T_J = 125°C
5
0
01 2 3 4 5 6 7 8 9
V_GE, GATE-TO-EMITTER VOLTAGE (V)
FIGURE 3, Transfer Characteristics
6
T_J = 25°C.
250µs PULSE TEST
<0.5 % DUTY CYCLE
5
I_C = 26A
4
I_C = 13A
3
I_C = 6.5A
2
1
06
8
10
12
14
16
V_GE, GATE-TO-EMITTER VOLTAGE (V)
FIGURE 5, On State Voltage vs Gate-to- Emitter Voltage
1.10
1.05
1.00
0.95
0.90-50 _{-25 0 25 50 75 100 125}
T_J, JUNCTION TEMPERATURE (°C)
FIGURE 7, Breakdown Voltage vs. Junction Temperature
APT13GP120BDQ1(G)
40
35
30
25
T_J = -55°C
20
15
10
T_J = 125°C
5 ^{TJ = 25°C}
0
0
1
2
3
4
5
6
V_CE, COLLECTER-TO-EMITTER VOLTAGE (V)
FIGURE 2, Output Characteristics (T_J = 125°C)
16
I_C = 13A
14 ^{TJ = 25°C}
V_CE = 240V
12
10
V_CE = 600V
8
6
V_CE = 960V
4
2
0
0 10 20 30 40 50 60
GATE CHARGE (nC)
FIGURE 4, Gate Charge
5
4 ^{IC = 26A}
3
2
I_C = 13A
I_C = 6.5A
1
V_GE = 15V.
250µs PULSE TEST
<0.5 % DUTY CYCLE
0
-55 -25 0 25 50 75 100 125
T_J, Junction Temperature (°C)
FIGURE 6, On State Voltage vs Junction Temperature
60
50
40
30
20
10
0
-50 -25 0 25 50 75 100 125 150
T_C, CASE TEMPERATURE (°C)
FIGURE 8, DC Collector Current vs Case Temperature