APT11058B2FLL Datasheet, PDF (4/5 Pages) Advanced Power Technology – POWER MOS 7 FREDFET

80
OPERATION HERE
LIMITED BY R_DS (ON)
10
100µS
5
1mS
1
10mS
TC =+25°C
TJ =+150°C
SINGLE PULSE
.1
1
10
100
1100
V_DS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 10, MAXIMUM SAFE OPERATING AREA
16
I_D = 20A
VDS= 220V
12
VDS= 550V
8
VDS= 880V
4
0
0
40
80
120 160 200
Q_g, TOTAL GATE CHARGE (nC)
FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE
120
t_d(off)
100
80 V_DD = 733V
R_G = 5Ω
60 ^{TJ = 125°C}
L = 100µH
40
20
t_d(on)
0
0 5 10 15 20 25 30 35
I_D (A)
FIGURE 14, DELAY TIMES vs CURRENT
2500
2000
1500
V_DD = 733V
R_G = 5Ω
T_J = 125°C
L = 100µH
E_ON includes
diode reverse recovery.
E_on
1000
500
E_off
0
0 5 10 15 20 25 30 35
I_D (A)
FIGURE 16, SWITCHING ENERGY vs CURRENT
20,000
10,000
1,000
100
APT11058B2FLL_LFLL
Ciss
Coss
Crss
10
0
10
20
30
40
50
V_DS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 11, CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
200
100
TJ =+150°C
TJ =+25°C
10
1
0.3 0.5 0.7 0.9 1.1 1.3 1.5
V_SD, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
FIGURE 13, SOURCE-DRAIN DIODE FORWARD VOLTAGE
70
60
50
t_f
40
V_DD = 733V
30 ^{RG = 5Ω}
T_J = 125°C
L = 100µH
20
t_r
10
0
0 5 10 15 20 25 30 35
I_D (A)
FIGURE 15, RISE AND FALL TIMES vs CURRENT
2500
2000
E_on
1500
E_off
1000
V_DD = 733V
I_D = 20A
500
T_J = 125°C
L = 100µH
E_ON includes
diode reverse recovery.
0
0 5 10 15 20 25 30 35 40 45 50
R_G, GATE RESISTANCE (Ohms)
FIGURE 17, SWITCHING ENERGY VS. GATE RESISTANCE