APT11058B2FLL Datasheet, PDF (2/5 Pages) Advanced Power Technology – POWER MOS 7 FREDFET

DYNAMIC CHARACTERISTICS
APT11058B2FLL_LFLL
Symbol Characteristic
Test Conditions
MIN TYP MAX UNIT
C_iss
C_oss
C_rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V_GS = 0V
V_DS = 25V
f = 1 MHz
4135
680
pF
120
Q_g
Total Gate Charge ³
Q_{gs Gate-Source Charge}
Q_{gd Gate-Drain ("Miller") Charge}
V_GS = 10V
V_DD = 550V
I_D = 20A @ 25°C
160
20
nC
105
t_d(on)
t_r
t_d(off)
t_f
E_on
E_off
E_on
E_off
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Switching Energy ⁶
Turn-off Switching Energy
Turn-on Switching Energy ⁶
Turn-off Switching Energy
RESISTIVE SWITCHING
16
V_GS = 15V
V_DD = 550V
I_D = 20A @ 25°C
8
ns
40
R_G = 0.6Ω
12
INDUCTIVE SWITCHING @ 25°C
V_DD = 733V, V_GS = 15V
700
I_D = 20A, R_G = 5Ω
210
µJ
INDUCTIVE SWITCHING @ 125°C
1450
V_DD = 733V V_GS = 15V
I_D = 20A, R_G = 5Ω
270
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Symbol Characteristic / Test Conditions
MIN TYP MAX UNIT
I_S
Continuous Source Current (Body Diode)
I_{SM Pulsed Source Current} 1 _{(Body Diode)}
V_{SD Diode Forward Voltage} 2 _{(VGS = 0V, IS = -20A)}
dv_/dt
Peak Diode Recovery ^dv/_dt ⁵
t_rr
Reverse Recovery Time
(I_S = -20A, ^di/_dt = 100A/µs)
Reverse Recovery Charge
Q_rr
(I_S = -20A, ^di/_dt = 100A/µs)
Peak Recovery Current
I_RRM
(I_S = -20A, ^di/_dt = 100A/µs)
T_j = 25°C
T_j = 125°C
T_j = 25°C
T_j = 125°C
T_j = 25°C
T_j = 125°C
20 _Amps
80
1.3 Volts
18 V/ns
340
ns
640
1.78
µC
4.47
11.4
Amps
16.4
THERMAL CHARACTERISTICS
Symbol Characteristic
MIN TYP MAX UNIT
R_θJC
R_θJA
Junction to Case
Junction to Ambient
0.22
40
°C/W
1 Repetitive Rating: Pulse width limited by maximum junction
temperature
2 Pulse Test: Pulse width < 380 µs, Duty Cycle < 2%
3 See MIL-STD-750 Method 3471
4 Starting T_j = +25°C, L = 12.50mH, R_G = 25Ω, Peak I_L = 20A
5 ^dv/_dt numbers reflect the limitations of the test circuit rather than the
device itself. I_S ≤ -I_D20A ^di/_dt ≤ 700A/µs V_R ≤ V_DSS T_J ≤ 150°C
6 Eon includes diode reverse recovery. See figures 18, 20.
APT Reserves the right to change, without notice, the specifications and information contained herein.
0.25
0.20
0.9
0.7
0.15
0.10
0.05
0
10^-5
0.5
Note:
0.3
t1
0.1
0.05
SINGLE PULSE
t2
Duty Factor D = ^t1/t2
Peak TJ = PDM x Z_θJC + TC
10^-4
10^-3
10^-2
10^-1
1.0
RECTANGULAR PULSE DURATION (SECONDS)
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION