APT1004RGN Datasheet, PDF (4/4 Pages) Advanced Power Technology – N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS

15
10
5
OPERATION HERE
LIMITED BY R_DS (ON)
1
10µS
100µS
1mS
0.5
TC =+25°C
TJ =+150°C
SINGLE PULSE
10mS
100mS
0.1
1
5 10
50 100
DC
500 1000
V_DS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 10, MAXIMUM SAFE OPERATING AREA
20
I_D = I_D [Cont.]
16
VDS=100V
12
VDS=200V
VDS=500V
8
4
0
0
20
40
60
80
100
Q_g, TOTAL GATE CHARGE (nC)
FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE
10,000
APT1004RGN
1,000
Ciss
Coss
100
Crss
10
0
10
20
30
40
50
V_DS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 11, TYPICAL CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
100
50
20
TJ =+150°C
10
5
TJ =+25°C
2
10
0.5
1.0
1.5
2.0
V_SD, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
FIGURE 13, TYPICAL SOURCE-DRAIN DIODE FORWARD VOLTAGE
TO-257AA Package Outline
1.14 (.045)
0.89 (.035)
16.89 (.665)
16.38 (.645)
10.92 (.430)
10.41 (.410)
13.64 (.537)
13.38 (.527)
19.05 (.750)
12.07 (.500)
3.05 (.120) BSC
5.08 (.200)
4.83 (.190)
.889 (.035) Dia. 3-Plcs.
.635 (.025)
2.54 (.100) BSC
Dimensions in Millimeters and (Inches)
10.67 (.420)
10.41 (.410)
5.33 (.210)
5.20 (.205)
3.81 (.150) Dia.
3.56 (.140)
Drain
Source
Gate