APT1004RGN Datasheet, PDF (1/4 Pages) Advanced Power Technology – N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS

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APT1004RGN 1000V 3.3A 4.00Ω
POWER MOS IV^TM
N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
MAXIMUM RATINGS
Symbol Parameter
V_DSS
I_D
I_DM
V_GS
Drain-Source Voltage
Continuous Drain Current @ T_C = 25°C
Pulsed Drain Current ¹
Gate-Source Voltage
P_D
Total Power Dissipation @ T_C = 25°C
Linear Derating Factor
T_J,T_{STG Operating and Storage Junction Temperature Range}
T_L
Lead Temperature: 0.063" from Case for 10 Sec.
All Ratings: T_C = 25°C unless otherwise specified.
APT1004RGN
UNIT
1000
Volts
3.3
13.2
Amps
±30
Volts
100
Watts
0.8
W/°C
-55 to 150
°C
300
STATIC ELECTRICAL CHARACTERISTICS
Symbol Characteristic / Test Conditions
BV_DSS Drain-Source Breakdown Voltage (V_GS = 0V, I_D = 250µA)
I_D(ON) On State Drain Current ² (V_DS > I_D(ON) x R_DS(ON) Max, V_GS = 10V)
R_DS(ON) Drain-Source On-State Resistance ² (V_GS = 10V, 0.5 I_D [Cont.])
I_DSS
Zero Gate Voltage Drain Current (V_DS = V_DSS, V_GS = 0V)
Zero Gate Voltage Drain Current (V_DS = 0.8 V_DSS, V_GS = 0V, T_C = 125°C)
I_GSS Gate-Source Leakage Current (V_GS = ±30V, V_DS = 0V)
V_GS(TH) Gate Threshold Voltage (V_DS = V_GS, I_D = 1.0mA)
MIN
1000
3.3
2
TYP
MAX UNIT
Volts
4.00
250
1000
±100
4
Amps
Ohms
µA
nA
Volts
SAFE OPERATING AREA CHARACTERISTICS
Symbol Characteristic
Test Conditions
MIN TYP MAX UNIT
SOA1
SOA2
I_LM
Safe Operating Area
V_DS = 0.4 V_DSS, I_DS = P_D / 0.4 V_DSS, t = 1 Sec. ₁₀₀
Safe Operating Area
I_DS = I_D [Cont.], V_DS = P_D / I_D [Cont.], t = 1 Sec. ₁₀₀
Inductive Current Clamped
3.3
Watts
Amps
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
USA
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405 S.W. Columbia Street
Bend, Oregon 97702-1035 Phone: [phone]
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