ARF475FL Datasheet, PDF (3/4 Pages) Advanced Power Technology – RF POWER MOSFET N-CHANNEL ENHANCEMENT MODE

ARF475FL
0.35
0.30
D = 0.9
0.25
0.7
0.20
0.5
0.15
Note:
0.10
0.05
0
10^-5
0.3
t1
SINGLE PULSE
0.1
0.05
t2
Duty Factor D = ^t1/t2
Peak TJ = PDM x Z_θJC + TC
10^-4
10^-3
10^-2
10^-1
1.0
RECTANGULAR PULSE DURATION (SECONDS)
FIGURE 5a, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
Junction
temp. (°C)
Power
(watts)
RC MODEL
0.142
0.169
0.00719
0.0856
Case temperature. (°C)
Figure 5b, TRANSIENT THERMAL IMPEDANCE MODEL
Table 1 - Typical Series Equivalent Large Signal Input - Output Impedance
Freq. (MHz)
30
60
90
120
150
Zin (Ω) gate to gate
5.2 -j10
1.37 -j5.2
.53 -j2.6
.25 -j1.0
.25 +j0.2
Z_OL (Ω) drain - drain
41 -j20
26 -j25
16 -j23
10 -j20
6.7 -j17
Zin - Gate -gate shunted with 25Ω I_DQ = 15mA each side
Z_OL - Conjugate of optimum load for 600 Watts peak output at Vdd = 150V
25% duty cycle and PW = 5ms