ARF475FL Datasheet, PDF (2/4 Pages) Advanced Power Technology – RF POWER MOSFET N-CHANNEL ENHANCEMENT MODE

DYNAMIC CHARACTERISTICS (per section)
Symbol Characteristic
C_iss
C_oss
C_rss
t_d(on)
t_r
t_d(off)
t_f
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Test Conditions
V_GS = 0V
V_DS = 50V
f = 1MHz
V_GS = 15V
V_DD = 250V
I_D = I_D[Cont.] @ 25°C
R_G = 1.6 Ω
ARF475FL
MIN TYP MAX UNIT
780 900
125 150
pF
7
10
5.1
10
4.1
8
ns
12
18
4.0
7
FUNCTIONAL CHARACTERISTICS (Push-Pull Configuration)
Symbol Characteristic
G_{PS Common Source Amplifier Power Gain}
η
Drain Efficiency
ψ
Electrical Ruggedness VSWR 5:1
Test Conditions
f = 128 MHz
Idq = 15mA V_DD = 150V
P_out = 900W
PW = 3ms
10% duty cycle
MIN TYP MAX UNIT
14
16
dB
50
55
%
No Degradation in Output Power
1 _{Pulse Test: Pulse width < 380 µS, Duty Cycle < 2%.}
APT Reserves the right to change, without notice, the specifications and information contained herein.
Per transistor section unless otherwise specified.
30
3000
25
12V
1000
Ciss
11V
500
10V
20
Coss
9V
100
15
50
8V
10
Crss
10
7V
5
0
0
5
10 15 20 25 30
V_DS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Figure 1, Typical Output Characteristics
1
.1
1
10
100 200
V_DS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Figure 2, Typical Capacitance vs. Drain-to-Source Voltage
30
VDS> ID (ON) x RDS (ON)MAX.
250 µSEC. PULSE TEST
25
@ <0.5 % DUTY CYCLE
TJ = -55°C
20
TJ = +25°C
15
10
5
TJ = +125°C
TJ = -55°C
0
0
2
4
6
8
10
V_GS, GATE-TO-SOURCE VOLTAGE (VOLTS)
Figure 3, Typical Transfer Characteristics
1.10
1.05
1.00
0.95
0.90
-50 -25 0 25 50 75 100 125 150
T_C, CASE TEMPERATURE (°C)
Figure 4, Typical Threshold Voltage vs Temperature