ARF1519 Datasheet, PDF (3/4 Pages) Advanced Power Technology – RF POWER MOSFET

1.2
1.1
1.0
0.9
0.8
0.7
0.6
-50 -25 0 25 50 75 100 125 150
T_C, CASE TEMPERATURE (°C)
Figure 3, Typical Threshold Voltage vs Temperature
ARF1519
50
45
6.5V
40
6V
35
30
5.5V
25
20
5V
15
10
4.5V
5
4V
0
0
5
10 15 20 25 30
V_DS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Figure 4, Typical Output Characteristics
0.2
0.1
0.05
0.01
0.005
0.001
0.0001
10^-5
D=0.5
0.2
0.1
0.05
0.02
0.01
SINGLE PULSE
Note:
t1
t2
Duty Factor D = ^t1/t2
Peak TJ = PDM x Z_θJC + TC
10^-4
10^-3
10^-2
10^-1
1.0
10
RECTANGULAR PULSE DURATION (SECONDS)
Figure 5, Maximum Effective Transient Thermal Impedance, Junction-to-Case vs. Pulse Duration
F (MHz)
2.0
13.5
Table 1 - Typical Class AB Large Signal Impedance -- ARF1519
Zin (Ω)
10.6 -j 12.2
0.5 -j 2.7
Z_OL (Ω)
31 -j 4.7
15.6 -j 16
Zin - Gate shunted with 25Ω I_DQ = 100mA
Z_OL - Conjugate of optimum load for 750 Watts
output at Vdd = 200V