ARF1519 Datasheet, PDF (2/4 Pages) Advanced Power Technology – RF POWER MOSFET

DYNAMIC CHARACTERISTICS
Symbol Characteristic
C_iss
C_oss
C_rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Test Conditions
V_GS = 0V
V_DS = 150V
f = 1 MHz
ARF1519
MIN TYP MAX UNIT
4600 5600
310 350
pF
90 120
FUNCTIONAL CHARACTERISTICS
Symbol Characteristic
Test Conditions
MIN TYP MAX UNIT
G_{PS Common Source Amplifier Power Gain}
η
Drain Efficiency
ψ
Electrical Ruggedness VSWR 10:1
f = 13.56MHz
V_GS = 0V V_DD = 200V
P_out = 750W
17
20
dB
70
75
%
No Degradation in Output Power
1 _{Pulse Test: Pulse width < 380 µS, Duty Cycle < 2%.}
APT Reserves the right to change, without notice, the specifications and information contained herein.
20,000
10,000
1000
Per transistor section unless otherwise specified.
Ciss
60
VDS> ID (ON) x RDS (ON)MAX.
250µSEC. PULSE TEST
50
@ <0.5 % DUTY CYCLE
TJ = -55°C
40
Coss
30
100
Crss
10
.1
1
10
100 200
V_DS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Figure 1, Typical Capacitance vs. Drain-to-Source Voltage
20
10
TJ = +25°C
TJ = +125°C
0
0 1 2 3 4 5 67
V_GS, GATE-TO-SOURCE VOLTAGE (VOLTS)
Figure 2, Typical Transfer Characteristics