APT55M85B2FLL Datasheet, PDF (3/4 Pages) Advanced Power Technology – POWER MOS 7 FREDFET

Typical Performance Curves
Junction
temp. ( ”C)
RC MODEL
0.0396
Power
(Watts)
0.0488
Case temperature
0.0924
0.0271F
0.231F
0.653F
FIGURE 2, TRANSIENT THERMAL IMPEDANCE MODEL
140
120
VDS> ID (ON) x RDS (ON)MAX.
250 µSEC. PULSE TEST
@ <0.5 % DUTY CYCLE
100
80
TJ = -55°C
60
40
TJ = +125°C
20
TJ = +25°C
0
0
2
4
6
8
V_GS, GATE-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 4, TRANSFER CHARACTERISTICS
60
50
40
30
20
10
0
25
50
75
100 125 150
T_C, CASE TEMPERATURE (°C)
FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE
2.5
I_D = 29.5A
V_GS = 10V
2.0
1.5
1.0
0.5
0.0
-50 -25 0 25 50 75 100 125 150
T_J, JUNCTION TEMPERATURE (°C)
FIGURE 8, ON-RESISTANCE vs. TEMPERATURE
160
VGS=15 &10V
120
80
APT55M85 B2FLL - LFLL
7.5V
7V
6.5V
40
6V
5.5V
5V
0
0
5
10 15 20 25 30
V_DS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 3, LOW VOLTAGE OUTPUT CHARACTERISTICS
1.14
1.13
NORMALIZED TO
V_GS = 10V @ 29.5A
1.12
1.10
VGS=10V
1.00
VGS=20V
0.90
0.80
0 20 40 60 80 100 120
I_D, DRAIN CURRENT (AMPERES)
FIGURE 5, R_DS(ON) vs DRAIN CURRENT
1.15
1.10
1.05
1.00
0.95
0.90
0.85
-50 -25 0 25 50 75 100 125 150
T_J, JUNCTION TEMPERATURE (°C)
FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE
1.2
1.1
1.0
0.9
0.8
0.7
0.6
-50 -25 0 25 50 75 100 125 150
T_C, CASE TEMPERATURE (°C)
FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE