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APT55M85B2FLL Datasheet, PDF (2/4 Pages) Advanced Power Technology – POWER MOS 7 FREDFET
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DYNAMIC CHARACTERISTICS
Symbol Characteristic
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Qg
Total Gate Charge 3
Qgs Gate-Source Charge
Qgd Gate-Drain ("Miller ") Charge
td(on) Turn-on Delay Time
tr
Rise Time
td(off) Turn-off Delay Time
tf
Fall Time
Test Conditions
VGS = 0V
VDS = 25V
f = 1 MHz
VGS = 10V
VDD = 275V
ID = 59A @ 25°C
VGS = 15V
VDD = 275V
ID = 59A @ 25°C
RG = 0.6Ω
APT55M85 B2FLL - LFLL
MIN TYP MAX UNIT
6590
1296
pF
91
157
38
nC
86
19
14
ns
41
6
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Symbol
IS
ISM
VSD
dv/dt
trr
Qrr
IRRM
Characteristic / Test Conditions
Continuous Source Current (Body Diode)
Pulsed Source Current 1 (Body Diode)
Diode Forward Voltage 2 (VGS = 0V, IS = -59A)
Peak Diode Recovery dv/dt 5
Reverse Recovery Time
(IS = -59A, di/dt = 100A/µs)
Reverse Recovery Charge
(IS = -59A, di/dt = 100A/µs)
Peak Recovery Current
(IS = -59A, di/dt = 100A/µs)
Tj = 25°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
MIN TYP MAX UNIT
59
Amps
236
1.3 Volts
15 V/ns
270
ns
540
1.8
µC
6.2
16
Amps
29
THERMAL CHARACTERISTICS
Symbol
RθJC
RθJA
Characteristic
Junction to Case
Junction to Ambient
MIN TYP MAX UNIT
0.18
40
°C/W
1 Repetitive Rating: Pulse width limited by maximum junction
temperature
2 Pulse Test: Pulse width < 380 µs, Duty Cycle < 2%
3 See MIL-STD-750 Method 3471
4 Starting Tj = +25°C, L = 1.72mH, RG = 25Ω, Peak IL = 59A
5 dv/dt numbers reflect the limitations of the test circuit rather than the
device itself. IS ≤ -ID59A di/dt ≤ 700A/µs VR ≤ VDSS TJ ≤ 150°C
APT Reserves the right to change, without notice, the specifications and information contained herein.
0.20
0.9
0.16
0.7
0.12
0.8
0.04
0 10-5
0.5
Note:
0.3
0.1
0.05
SINGLE PULSE
t1
t2
Duty Factor D = t1/t2
Peak TJ = PDM x ZθJC + TC
10-4
10-3
10-2
10-1
1.0
RECTANGULAR PULSE DURATION (SECONDS)
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
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