APT5010JN Datasheet, PDF (3/4 Pages) Advanced Power Technology – N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS

APT5010/5012JN
100
VGS=8, 9, 10V
7V
80
60
6V
40
5V
20
00
50
100 150 200 250
V_DS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 2, TYPICAL OUTPUT CHARACTERISTICS
100
TJ = -55°C
VDS> ID (ON) x RDS (ON)MAX.
80
250µSEC. PULSE TEST
@ <0.5 % DUTY CYCLE
60
TJ = +25°C
TJ = +125°C
40
20
TJ = +125°C
TJ = +25°C
TJ = -55°C
0
0
2
4
6
8
10
V_GS, GATE-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 4, TYPICAL TRANSFER CHARACTERISTICS
50
40
APT5010JN
30
APT5012JN
20
10
0 ₂₅
50
75
100 125 150
T_C, CASE TEMPERATURE (°C)
FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE
2.5
I_D = 0.5 I_D [Cont.]
V_GS = 10V
2.0
1.5
1.0
0.5
0.0
-50 -25 0 25 50 75 100 125 150
T_J, JUNCTION TEMPERATURE (°C)
FIGURE 8, ON-RESISTANCE vs. TEMPERATURE
100
80
VGS=8, 9, 10V
7V
60
6V
40
20
5V
00
2
4
6
8
10
V_DS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 3, TYPICAL OUTPUT CHARACTERISTICS
2.5
TJ = 25°C
250µSEC. PULSE TEST
@ <0.5 % DUTY CYCLE
NORMALIZED TO
2.0
V_GS = 10V @ 0.5 I_D [Cont.]
1.5
VGS=10V
VGS=20V
1.0
0.5
0
40
80
120
160
200
I_D, DRAIN CURRENT (AMPERES)
FIGURE 5, R_DS(ON) vs DRAIN CURRENT
1.2
1.1
1.0
0.9
0.8
0.7-50 _{-25 0 25 50 75 100 125 150}
T_J, JUNCTION TEMPERATURE (°C)
FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE
1.4
1.2
1.0
0.8
0.6
0.4
-50 -25 0 25 50 75 100 125 150
T_C, CASE TEMPERATURE (°C)
FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE