APT5010JN Datasheet, PDF (1/4 Pages) Advanced Power Technology – N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS

D
G
S
APT5010JN 500V 48.0A 0.10Ω
APT5012JN 500V 43.0A 0.12Ω
ISOTOP^®
POWER MOS IV^®
"UL Recognized" File No. E145592 (S)
SINGLE DIE ISOTOP^® PACKAGE
N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
MAXIMUM RATINGS
All Ratings: T_C = 25°C unless otherwise specified.
Symbol Parameter
APT
5010JN
APT
5012JN
UNIT
V_{DSS Drain-Source Voltage}
500
500
Volts
I_D
I_DM, l_LM
V_GS
Continuous Drain Current @ T_C = 25°C
Pulsed Drain Current ¹ and Inductive Current Clamped
Gate-Source Voltage
48
43
192
172
±30
Amps
Volts
P_D
Total Power Dissipation @ T_C = 25°C
Linear Derating Factor
520
4.16
Watts
W/°C
T_J,T_STG
T_L
Operating and Storage Junction Temperature Range
Lead Temperature: 0.063" from Case for 10 Sec.
-55 to 150
°C
300
STATIC ELECTRICAL CHARACTERISTICS
Symbol Characteristic / Test Conditions / Part Number
MIN
Drain-Source Breakdown Voltage
BV_{DSS (VGS = 0V, ID = 250 µA)}
APT5010JN
500
APT5012JN
500
I_D(ON)
On State Drain Current ²
(V_DS > I_D(ON) x R_DS(ON) Max, V_GS = 10V)
APT5010JN
48
APT5012JN
43
Drain-Source On-State Resistance ²
R_DS(ON) _{(VGS = 10V, 0.5 ID [Cont.])}
APT5010JN
APT5012JN
I_DSS
Zero Gate Voltage Drain Current (V_DS = V_DSS, V_GS = 0V)
Zero Gate Voltage Drain Current (V_DS = 0.8 V_DSS, V_GS = 0V, T_C = 125°C)
I_GSS Gate-Source Leakage Current (V_GS = ±30V, V_DS = 0V)
V_GS(TH) Gate Threshold Voltage (V_DS = V_GS, I_D = 2.5mA)
2
THERMAL CHARACTERISTICS
TYP MAX UNIT
Volts
Amps
0.10
0.12
250
1000
±100
4
Ohms
µA
nA
Volts
Symbol Characteristic
MIN TYP MAX UNIT
R_ΘJC
R_ΘCS
Junction to Case
Case to Sink (Use High Efficiency Thermal Joint Compound and Planer Heat Sink Surface.)
0.06
0.24
°C/W
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
USA
405 S.W. Columbia Street
EUROPE
Avenue J.F. Kennedy Bât B4 Parc Cadéra Nord
Bend, Oregon 97702 -1035
F-33700 Merignac - France
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FAX: [phone]
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