APT45GP120B Datasheet, PDF (3/6 Pages) Advanced Power Technology – POWER MOS 7 IGBT

TYPICAL PERFORMANCE CURVES
90
VGE = 15V.
80
250µs PULSE TEST
<0.5 % DUTY CYCLE
70
60
50
40
T_C=25°C
T_C=125°C
30
20
10
0
0 0.5 1 1.5 2 2.5 3 3.5 4
V_CE, COLLECTER-TO-EMITTER VOLTAGE (V)
FIGURE 1, Output Characteristics(V_GE = 15V)
160
250µs PULSE TEST
<0.5 % DUTY CYCLE
140
120
100
TJ = -55°C
80
TJ = 25°C
60
40
TJ = 125°C
20
0
0 1 2 3 4 5 6 7 8 9 10
V_GE, GATE-TO-EMITTER VOLTAGE (V)
FIGURE 3, Transfer Characteristics
5
I_C = 90A
4
TJ = 25°C.
250µs PULSE TEST
<0.5 % DUTY CYCLE
I_C = 45A
3
I_C = 22.5A
2
1
0
6
8
10
12
14
16
V_GE, GATE-TO-EMITTER VOLTAGE (V)
FIGURE 5, On State Voltage vs Gate-to- Emitter Voltage
1.2
1.15
1.10
1.05
1.0
0.95
0.9
0.85
0.8
-50 -25 0 25 50 75 100 125
T_J, JUNCTION TEMPERATURE (°C)
FIGURE 7, Breakdown Voltage vs. Junction Temperature
90
VGE = 10V.
80
250µs PULSE TEST
<0.5 % DUTY CYCLE
70
APT45GP120B
60
50
T_C=25°C
40
30
T_C=125°C
20
10
0
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5
V_CE, COLLECTER-TO-EMITTER VOLTAGE (V)
FIGURE 2, Output Characteristics (V_GE = 10V)
16
I_C = 45A
14 ^{TJ = 25°C}
V_CE=240V
12
V_CE=600V
10
8
V_CE=960V
6
4
2
0
0 20 40 60 80 100 120 140 160 180 200
GATE CHARGE (nC)
FIGURE 4, Gate Charge
5
4.5
4
I_C = 90A
3.5
I_C = 45A
3
2.5
I_C = 22.5A
2.0
1.5
1.0
VGE = 15V.
0.05 250µs PULSE TEST
<0.5 % DUTY CYCLE
0
0
25
50
75
100 125
T_J, Junction Temperature (°C)
FIGURE 6, On State Voltage vs Junction Temperature
160
140
120
100
80
60
40
20
0
-50 -25 0 25 50 75 100 125 150
T_C, CASE TEMPERATURE (°C)
FIGURE 8, DC Collector Current vs Case Temperature